MT8VDDT6464HY-335F3 Allicdata Electronics
Allicdata Part #:

MT8VDDT6464HY-335F3-ND

Manufacturer Part#:

MT8VDDT6464HY-335F3

Price: $ 45.73
Product Category:

Memory Cards, Modules

Manufacturer: Micron Technology Inc.
Short Description: MODULE DDR SDRAM 512MB 200SODIMM
More Detail: Memory Module DDR SDRAM 512MB 333MT/s 200-SODIMM
DataSheet: MT8VDDT6464HY-335F3 datasheetMT8VDDT6464HY-335F3 Datasheet/PDF
Quantity: 1000
100 +: $ 41.57240
Stock 1000Can Ship Immediately
$ 45.73
Specifications
Series: --
Part Status: Obsolete
Memory Type: DDR SDRAM
Memory Size: 512MB
Speed: 333MT/s
Package / Case: 200-SODIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT8VDDT6464HY-335F3 is a high-performance, cost-effective Dynamic Random Access Memory (DRAM) used in a variety of memory-intensive applications. It is designed to meet the needs of a wide range of applications ranging from consumer, industrial, and military applications.

The MT8VDDT6464HY-335F3 is a dual-channel, 64-bit double data rate (DDR) SDRAM module. It is designed for low-voltage operation and has a wide-range of clock rates ranging from 166MHz to 333MHz. The MT8VDDT6464HY-335F3 is designed with an internal address latch and a voltage regulator, allowing for increased power savings. It also features a fast-load signal that allows the module to enter an idle state when the load on the system is low.

In terms of application field, the MT8VDDT6464HY-335F3 is commonly used in personal computers, servers, hyper-scale data centers, embedded systems, and edge computing systems. The module is designed to operate at high frequencies and offers a wide range of data transfer rates for both read and write operations. This makes it ideal for applications such as streaming media, high-performance computing, and networked storage.

On the other hand, in terms of its working principle, the MT8VDDT6464HY-335F3 is designed to operate in a synchronous mode. Thus, the module first receives an external clock signal from the system. Then, the clock signal is used to trigger the read and write command signals which the module needs to perform the memory operations. During each clock cycle, the module can perform up to eight read or write operations.

In conclusion, the MT8VDDT6464HY-335F3 is a high-performance, cost-effective Dynamic Random Access Memory (DRAM) used in a variety of memory-intensive applications. It is designed to meet the needs of a wide range of applications ranging from consumer, industrial, and military applications. The module is commonly used in personal computers, servers, hyper-scale data centers, embedded systems, and edge computing systems. In terms of its working principle, the MT8VDDT6464HY-335F3 is designed to operate in a synchronous mode.

The specific data is subject to PDF, and the above content is for reference

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