MT9HTF6472PY-80ED2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT9HTF6472PY-80ED2 is a DDR2 synchronous DRAM module used in a variety of memory applications. It features a 64M x 72 organization with an onboard ECC, which provides reliable data storage and increased security. This device is ideal for memory applications that require high data throughput and error correction abilities, such as servers, workstations, and storage networks.

The MT9HTF6472PY-80ED2 offers several features that make it an attractive option for memory applications. It has a high data transfer rate of up to 800MHz, which is fast enough to accommodate the needs of many applications. It also features an on-chip error correction code (ECC), which can detect and correct single-bit errors in memory cells. This, along with a built-in self-refresh capability, ensures that data is correctly read and written. In addition, the device includes a data training engine which allows for easy configuration and calibration of the system.

The MT9HTF6472PY-80ED2 functions in two major ways: as an external memory module or as an on-chip buffer. As an external memory module, the device is connected to the system board through a series of pins which are configured to provide the necessary memory module control signals. These signals control both the read and write cycles of the memory module. As an on-chip buffer, the device provides internal memory which can be used to store data while the CPU is processing another part of the system.

The MT9HTF6472PY-80ED2 is well-suited for a variety of memory applications, including servers, workstations, and storage networks. Its high data transfer rate, built-in ECC capability, and self-refresh capability make it a reliable choice for systems which require reliable data storage. Its data training engine allows for easy calibration of the system, making it easier to set up and configure. As such, it is an ideal choice for memory applications which require high data throughput and error correction capabilities.

The specific data is subject to PDF, and the above content is for reference