MT9JSF51272PZ-1G6E1

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The MT9JSF51272PZ-1G6E1 memory module is a single-module memory technology device utilized in memory-based applications such as high-performance personal computers, servers, and mainframes. This device is developed to provide an excellent performance in terms of memory capacity and access speed at reduced cost.

This device is constructed with a 1 Gigabyte (GB) DDR3 SDRAM integrated circuit. It has an advanced burst length of 8 and an operating voltage range of 1.35 V to 1.5 V. It can also support maximum transfer rates of 1333 MT/s (Mega-transfers per second). Its parallel bus type is organized in a x4 configuration and has a total of 182,304 words of addressable storage.

This memory module is an ideal solution for applications requiring high memory bandwidth and power efficiency. With its high-performance DDR3 SDRAM technology, it offers exceptional reliability and maximum performance for processor-based systems. Additionally, its single-module configuration reduces wiring and installation time, thus, providing an easier and more cost-effective upgrade.

The working principle of this memory module is characterized by its ability to store data and instructions in a short period of time. This device makes use of dynamic random-access memory (DRAM) technology, which is implemented in a x4 memory array and organized in a x4 configuration. It stores data and instructions in a high-speed memory array by using multiple address signals in order to access and transfer them rapidly.

The MT9JSF51272PZ-1G6E1 memory module is suitable for various embedded and computing applications including digital signal processing (DSP) systems, embedded graphics, medical imaging, gaming, telecommunications, military, industrial automation, and automotive control systems. It is a reliable and cost-effective solution for ensuring fast, reliable data transfer and storage in these applications.

This device is also compatible with Intel and AMD platforms, making it suitable for different types of users. It has an extended memory cycles time cycle of 1.8 microseconds, which enables it to access data more quickly than other similar memory modules. Additionally, it offers superior electrostatic discharge (ESD) protection, which helps protect against destructive static electricity.

In conclusion, the MT9JSF51272PZ-1G6E1 memory module is a highly reliable and cost-effective solution for a wide range of applications. With its excellent performance and high-speed memory array, it is an ideal choice for providing reliable data transfer and storage. Furthermore, its compatibility with Intel and AMD platforms and its extended memory cycle time ensures fast and stable data transfers. Therefore, this memory module is an ideal choice for high-performance embedded, computing, and gaming applications.

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