MT9VDDT6472PHG-265D2

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MT9VDDT6472PHG-265D2 is one of the most advanced memory modules available in the market. It has been designed specifically for high-performance applications as well as for consumption of low power. It carries a maximum capacity of 32 GB and runs with a clock speed of 1333 MHZ.

The module is made up of two, 8-bit wide x 8-bit deep DRAM devices, both of which leverage Samsung’s DRAM core technology. It features a 65nm manufacturing process and an ultra low-power design. MT9VDDT6472PHG-265D2 is also equipped with high-performance auto-migration technology, which helps to prevent data loss in system-level events.

As a memory module, MT9VDDT6472PHG-265D2 is used mainly in applications requiring high memory bandwidth and low latency. Typical applications include servers, embedded systems, consumer electronics, network systems, gaming consoles, and industrial automation. It supports various types of interfaces including DDR, DDR II, and DDR III.

In terms of working principle, the module relies on a type of semiconductor memory called dynamic random access memory, or DRAM. It works by storing a charge on a tiny capacitor, which is then read from by a series of transistors that control the exchange of information from one part of the module to another. The data is then read or written to the capacitor, depending on the type of DRAM used. The module is constantly active, requiring a constant power supply to maintain the necessary charge in the capacitors. If the power supply is disrupted, the data stored in the DRAM will be lost.

The module is also equipped with error checking and correction (ECC) code which is necessary for the proper operation of the module. It checks and corrects data errors which occur due to memory and system errors. ECC can detect and correct single and multiple bit errors, meaning that the module is more reliable when compared to other types of memory.

In summary, MT9VDDT6472PHG-265D2 is a versatile memory module, designed to provide reliable performance in a wide range of applications. Its advanced features such as auto-migration technology, low power consumption, and ECC make it an ideal choice for high-performance memory applications.

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