MT9VDDT6472PHY-335J1 Allicdata Electronics
Allicdata Part #:

MT9VDDT6472PHY-335J1-ND

Manufacturer Part#:

MT9VDDT6472PHY-335J1

Price: $ 44.58
Product Category:

Memory Cards, Modules

Manufacturer: Micron Technology Inc.
Short Description: MODULE DDR SDRAM 512MB 200SODIMM
More Detail: Memory Module DDR SDRAM 512MB 333MT/s 200-SODIMM
DataSheet: MT9VDDT6472PHY-335J1 datasheetMT9VDDT6472PHY-335J1 Datasheet/PDF
Quantity: 1000
100 +: $ 40.53310
Stock 1000Can Ship Immediately
$ 44.58
Specifications
Series: --
Part Status: Obsolete
Memory Type: DDR SDRAM
Memory Size: 512MB
Speed: 333MT/s
Package / Case: 200-SODIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT9VDDT6472PHY-335J1, also called flash memory, is a type of non-volatile storage technology that doesn’t require additional power to maintain its data. It has become an increasingly popular form of memory choice amongst embedded system designers. MT9VDDT6472PHY-335J1, an alternative type of flash memory, can reduce system cost and board space while offering a better performance compared to its related devices.

This memory module can be widely used in many fields. Because of its small volume, low power usage and high speeds, MT9VDDT6472PHY-335J1 is suitable for use in portable devices such as cellphones and tablets. It’s also used in communication systems such as routers and base stations. MT9VDDT6472PHY-335J1 is also popular in sensory systems, medical devices, smart cards, and solid-state drives (SSD).

The working principle of MT9VDDT6472PHY-335J1 is quite simple. It contains substrates with a grid array of millions of cells that are linked together. Each of these cells stores a single bit of data. The individual cells are covered up with a layer of guards in order to prevent interference. When an electrical current passes through the cell, a value is generated. This value is then transferred and stored in the form of a binary code.

To read the data stored in the cells, an electric current needs to be sent through the cell. The value of the current will depend on the type of memory. For example, when reading a static RAM, the current must be high enough to push the data stored in the cell onto a circuit. On the other hand, when reading a dynamic RAM, the current must be low enough to only reflect the data without pushing it onto a circuit.

In order to write data to the cells, the electric current passing through the cell must be adjusted accordingly. This current will vary from 0 and 1 to 0.1 and 0.9, or vice versa, depending on the type of data being written. Depending on the specific type of memory, the MT9VDDT6472PHY-335J1 module can store from 128Kbits to 1GB of data.

Since MT9VDDT6472PHY-335J1 offers both a wide data storage capacity and a high data transfer rate, it makes it the perfect choice for a large number of applications. It’s particularly useful in those cases where the power consumption is an important factor such as in portable devices or in sensory systems. By using this type of memory module, the designers can reduce power consumption, device size, and cost of the final product.

The specific data is subject to PDF, and the above content is for reference

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