MTEDBTH008MBA-1K1

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MTEDBTH008MBA-1K1 Application Field and Working Principle

The MTEDBTH008MBA-1K1 is a memory module of the Non-Volatile RAM (NVRAM) family, featuring two Gigabytes of flash memory. It is designed for industrial applications that require reliable, cost effective, and long term data storage solutions. Typically, it is used in the control and automation markets for industrial devices, automotive, and medical applications.

The MTEDBTH008MBA-1K1 is a highly reliable, error correcting, flash memory module which features a proprietary dual bank redundancy architecture that enables error detection in the event of a single bit failure. It offers customers a quality solution for use in a variety of industrial applications.

The MTEDBTH008MBA-1K1 is a fully synchronous operation memory module with an access time of 25ns. The module consists of two 4-Mbit NAND flash memories that are organized into 16×512K banks. The chip organization format enables a synchronous page mode operation which increases cycle time performance with low power consumption. The module can achieve read, write, and erase speeds of up to 10MB/s.

The MTEDBTH008MBA-1K1 contains an on-chip controller and is organized in a single-bit parallel configuration. The controller contains an error correction code (ECC) circuit, which can detect and correct single bit errors in each sub sector, and an error detection and logging circuit which can detect double bit errors in each sector. The on-chip ECC circuit is achieved using a data encoding technique which decreases data throughput over long periods of operation.

The MTEDBTH008MBA-1K1 is a low voltage device with its logic voltage ranging between 1.8 and 3.6V. It is ideal for rack-mounted applications due to its low power consumption. The chip also features temperature monitoring to better manage the internal temperature of the device.

The MTEDBTH008MBA-1K1 offers the unique dual bank redundancy architecture, which provides customers with the highest level of reliability and data protection of any memory module. The dual bank redundancy architecture allows for immediate data write access and simultaneous reading of both banks. This eliminates the need for error correction code (ECC) clear operations, which enhances system performance. In addition, the dual bank architecture provides more than 500x increase in read/write/erase reliability compared to single bank architectures.

In summary, the MTEDBTH008MBA-1K1 is a highly reliable, low power, and cost effective memory module that provides customers with the highest level of data storage. With its advanced dual bank redundancy architecture, it is the ideal choice for a variety of industrial applications that require reliable and cost effective data storage solutions.

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