MTFC16GJVEC-2F WT TR Allicdata Electronics
Allicdata Part #:

MTFC16GJVEC-2FWTTR-ND

Manufacturer Part#:

MTFC16GJVEC-2F WT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G MMC 169WFBGA
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) MMC
DataSheet: MTFC16GJVEC-2F WT TR datasheetMTFC16GJVEC-2F WT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: e•MMC™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: MMC
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: --
Supplier Device Package: --
Base Part Number: MTFC16G
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MTFC16GJVEC-2F WT TR is a unique type of memory technology that is used in various applications where speed, endurance and data integrity are important. This type of memory is ideal for applications such as automotive, embedded applications, networking and industrial. The MTFC16GJVEC-2F WT TR technology uses a new 3D stacking technology that allows for greater data density and faster access times. This type of memory is faster and more reliable than conventional DRAM and Flash memories.

The MTFC16GJVEC-2F WT TR technology is based on a type of memory called NAND flash memory. This type of memory works by storing data in a series of electrically erasable transistors. The MTFC16GJVEC-2F WT TR enables users to read and write information onto this type of memory in a faster and more efficient manner compared to other types of memory. Additionally, this type of memory is also more resistant to external shock, temperature, humidity and static electricity.

The main difference between conventional DRAM and MTFC16GJVEC-2F WT TR is that DRAM stores data in a volatile manner, meaning that the data will be lost if power is lost. On the other hand, the MTFC16GJVEC-2F WT TR technology stores data in a non-volatile manner, meaning that the data will remain even when there is a power cut. This allows users to be more confident in their data integrity and makes the MTFC16GJVEC-2F WT TR more suitable for applications where data protection is important.

The MTFC16GJVEC-2F WT TR technology works by storing data on a three-dimensional structure of cells. Each cell within the 3D structure is connected to its neighbor cells, forming a continuous string of cells. Data is written onto this continuous string as electric current. Since all of the cells are linked together, data can be read or written in parallel, increasing the speed of the memory. Additionally, the cells are arranged so that data is stored in a highly efficient manner, resulting in increased data density. By combining the high data density and fast speeds of the MTFC16GJVEC-2F WT TR technology, the memory is able to access data quickly and reliably.

The MTFC16GJVEC-2F WT TR technology is an example of a memory technology that is ideal for a wide range of applications. Its ability to store and access data quickly and efficiently makes it suitable for applications where speed, endurance and data integrity are all important factors. Additionally, its resistance to external factors, such as shock, temperature, humidity and static electricity, makes it suitable for applications in automotive, embedded, networking and industrial environments.

The specific data is subject to PDF, and the above content is for reference

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