
Allicdata Part #: | MTFC4GLMDQ-AITZTR-ND |
Manufacturer Part#: |
MTFC4GLMDQ-AIT Z TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 32G MMC LBGA |
More Detail: | FLASH - NAND Memory IC 32Gb (4G x 8) MMC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | e•MMC™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 32Gb (4G x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | MMC |
Voltage - Supply: | -- |
Operating Temperature: | -40°C ~ 85°C (TA) |
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Memory technology is a developing field that has been rapidly improving in recent years. With advances in semiconductor process technology, memory technology has enabled faster, more reliable and efficient storage and retrieval of information. The MTFC4GLMDQ-AIT Z TR application field and working principle is an important development in the field of memory technology. This article will give an overview of the application field and working principle of this specific memory technology.
MTFC4GLMDQ-AIT Z TR is a type of Phase-Change Memory (PCM) that has been developed by the GlobalFoundries-IBM Alliance. It uses a combination of electrical and thermal energy to store information in its resistance state. The main features of this technology are its low power consumption, high-speed switching capability and high endurance. These features make it suitable for use in applications where power consumption and speed are key factors.
The application field for MTFC4GLMDQ-AIT Z TR is wide-ranging and includes Low-Power Memory (LPM) solutions such as embedded non-volatile memory, mobile applications, low latency memory access, high-density data storage and storage-class memories. The technology can also be used for high performance Storage Class Memory (SCM) solutions such as Solid State Drives (SSDs). It is also being explored for usage in the automotive and gaming sectors.
The working principle of the MTFC4GLMDQ-AIT Z TR technology is based on the \'Phase-Change\' effect. This effect occurs when an electric current is applied to an element of the memory, causing it to shift between a low and a high resistance state. By controlling the amount of energy applied to the elements, the data can be stored or retrieved depending on the resistance state. The advantage of this technology is that the data can be quickly and reliably stored and retrieved with no need for refresh cycles.
MTFC4GLMDQ-AIT Z TR is a very reliable and efficient memory technology that has a wide range of application areas. It is suitable for both low-power memory solutions and high-performance storage class memory solutions. The technology is also cost-effective and consumes less power than other types of memory. This makes it an attractive solution for those looking for cost-effective, energy-efficient memory technologies.
In conclusion, the MTFC4GLMDQ-AIT Z TR application field and working principle is an important development in the field of memory technology. The technology provides reliable and efficient storage and retrieval of information with low-power consumption and high-speed switching capability. This makes it suitable for a variety of applications and makes it an attractive option for those looking for cost-efficient and energy-efficient memory technologies.
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