MTFC8GACAEDQ-AAT

Series:	e•MMC™
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	64Gb (8G x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	MMC
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)

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Introduction

MTFC8GACAEDQ-AAT is a type of dynamic random access memory (DRAM) integrated circuit designed for use in computers and other digital/electronic devices. It is based on DDR-III technology, which has been developed by Micron Technology, Inc. (MTI). The chip can provide up to 8 Gigabytes of Random Access Memory in a dual in-line memory module (DIMM) form factor. It is designed to offer a high-performance and cost-efficient solution for personal computers, work stations, and embedded systems.

Application Field

MTFC8GACAEDQ-AAT is mainly used in personal computers and workstations. It is used as a main memory module in desktop computers, laptops, and servers. In addition, this DRAM can also be utilized in digital video equipment, point-of-sale terminals, and communication devices. This memory chip offers a high-performance solution to embedded systems, allowing the devices to operate faster. For instance, it can be used as embedded caches in network servers or routers and gateways, as well as a main memory in hand-held devices and embedded systems.

Work Principle of MTFC8GACAEDQ-AAT

MTFC8GACAEDQ-AAT is based on DDR-III STRATIX V technology, which involves a combination of multi-bank storage, row-wise chip selection, and a sophisticated prefetch architecture. It uses a synchronous design that allows the data to be stored and transferred between memory cells with clock precision. Its 8GByte DIMM layout is configured with sixteen DRAM banks in two die stacks, two chip selects for each side, and two pairs of DDR channels for read-write operations. The chip is able to provide a maximum data bandwidth of up to 15GB/s and a refresh rate of 2.5ns.The multi-bank design enables the memory chip to access a larger range of addresses at once, as each bank can be independently accessed. This increases the chip’s capacity and reduces the time necessary to access a particular data set. The row-wise chip selection (RWC) reduces the number of pins necessary for the data I/O interface, allowing a larger number of components to be placed on a single chip. The sophisticated prefetch architecture helps to improve the memory’s total throughput by allowing multiple banks to access the same data simultaneously.

Conclusion

MTFC8GACAEDQ-AAT is a DRAM integrated circuit designed for personal computers and workstations. It uses DDR-III STRATIX V technology to offer a high-performance solution for embedded systems and portable devices. The chip’s multi-bank storage and row-wise chip selection help to reduce access time and improve data throughput. Its sophisticated prefetch architecture further enhances the chip’s performance, enabling faster processing and data retrieval. Ultimately, MTFC8GACAEDQ-AAT is a cost-efficient and powerful solution for any system requiring high-performance memory.

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