MTPD1346-100 Allicdata Electronics
Allicdata Part #:

1125-1029-ND

Manufacturer Part#:

MTPD1346-100

Price: $ 0.00
Product Category:

Sensors, Transducers

Manufacturer: Marktech Optoelectronics
Short Description: PIN DIODE 1300NM FLAT 2.8MM TO46
More Detail: Photodiode 1300nm 45°
DataSheet: MTPD1346-100 datasheetMTPD1346-100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: 1346
Packaging: Bulk 
Part Status: Obsolete
Wavelength: 1300nm
Color - Enhanced: Infrared (NIR)/Red
Spectral Range: 800nm ~ 1750nm
Diode Type: PIN
Responsivity @ nm: --
Response Time: --
Voltage - DC Reverse (Vr) (Max): 5V
Current - Dark (Typ): 200nA
Active Area: 0.79mm²
Viewing Angle: 45°
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: --
Description

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Optical Sensors - Photodiodes are a type of sensors which can convert light into electric signals. One of the most popular and commonly used photodiode is the MTPD1346-100, which is widely used in applications such as light detection, infrared detection and medical imaging. This article aims to provide a brief overview about the application field and working principle of the MTPD1346-100.

Application Field

The MTPD1346-100 is a highly sensitive, high-speed photo IC which is designed for applications which require accurate and reliable photodetection. Due to its wide operating range, low noise operation and low saturation voltage, the MTPD1346-100 is very suitable for high-precision ambient light sensing and infrared sensing. It is widely used in applications such as: automotive lighting systems, motion sensing systems, medical imaging, optical communications, and more.

The MTPD1346-100 is also useful for measuring high light levels. This is achieved by its logarithmic response to light levels, which makes it suitable for applications where a large dynamic range is needed. As a result, it is often used in industrial lighting systems, outdoor lighting, and more.

Working Principle

The MTPD1346-100 is a photodiode which utilizes a PIN (i.e. “passivated intrinsic nitride”) layer as the photosensitive material. This layer is embedded inside a metal oxide semiconductor (MOS) structure. The PIN layer is made of a wide band gap semiconductor which efficiently absorbs stray light from the surrounding environment. When the stray light enters the PIN layer, it generates electrons-hole pairs which are collected by an ohmic metal contact.

The collected electrons then travel through the PIN layer and enter the input capacitance of the MOS structure. This then induces a current in the photo diode which is proportional to the intensity of the light. The collected current then travels through the external load resistance and is measured as a voltage across the load resistance.

The MTPD1346-100 is a low-threshold photodiode because of its unique PIN layer material and structure design. This makes it very suitable for applications which require accurate and reliable photodetection. Furthermore, its wide supply voltage range and high operating temperature make it suitable for many industrial applications.

Conclusion

The MTPD1346-100 is a highly sensitive and reliable photodiode which is designed for applications that require accurate and reliable photodetection. Its wide operating range, low noise operation and low saturation voltage make it ideal for applications such as automotive lighting systems, motion sensing systems, medical imaging, optical communications, and more. Its low-threshold PIN layer also makes it very suitable for high-precision ambient light sensing and infrared sensing. The MTPD1346-100 is truly a versatile and sophisticated device which is capable of performing wide range of tasks in many different fields.

The specific data is subject to PDF, and the above content is for reference

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