MTZJT-726.8B Allicdata Electronics
Allicdata Part #:

MTZJT-726.8B-ND

Manufacturer Part#:

MTZJT-726.8B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 6.8V 500MW DO34
More Detail: Zener Diode 6.8V 500mW ±3% Through Hole MSD
DataSheet: MTZJT-726.8B datasheetMTZJT-726.8B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 3.5V
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Description

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MTZJT-726.8B is a diode usually used for protection circuits and over-voltage protection. The diode is a Single Zener, meaning that it consists of only one Zener diode element. This single Zener diode offers a wide operating temperature range from -55℃ to +125℃, and its maximum repetitive peak reverse voltage can reach up to 13.2V.

The MTZJT-726.8B diode has a variety of applications and is often used for protecting power supplies against voltage spikes, protecting measuring circuits from overloading and other situations requiring voltage protection. This diode can also be used to limit output voltages to a safe level in electronic circuits, as overvoltage protection.

MTZJT-726.8B diodes are also used to protect sensitive components, such as transistors, thyristors and MOSFETs, from over-voltage and current and other hazardous situations. In addition, MTZJT-726.8B diodes can protect microprocessors and memory circuits in microcomputer systems, the protection diodes can also be used in driver circuits to reduce the surge of driving current.

The working principle of the MTZJT-726.8B diode is based on the fact that a reverse biasing voltage applied to the diode creates a reverse current flow. While biasing forward, the diode allows current to flow in the forward direction. In the reverse biasing situation, the voltage across the diode creates a barrier, preventing current from flowing in the reverse direction. The Zener breakdown voltage of the diode is determined by the amount of voltage necessary to create this reverse current flow.

When the reverse voltage applied to the diode is high enough, it will break down and allow a reverse current to flow. The amount of current that can be allowed to flow by the diode is limited by the value of the circuit resistance that is in parallel with the diode. This allows the diode to be used as a clamp, limiting the amplitude of any reverse voltage that may develop in a given circuit.

The MTZJT-726.8B diode can be used for a wide range of applications in a variety of circuits, because of its versatility and low voltage drop. It can be used to protect sensitive components, such as transistors, thyristors and MOSFETs, limit output voltages, or provide protection against overvoltage. Its ability to regulate voltage in an application makes it an ideal component for most electronic protection needs.

The specific data is subject to PDF, and the above content is for reference

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