MWI75-12E8 Allicdata Electronics
Allicdata Part #:

MWI75-12E8-ND

Manufacturer Part#:

MWI75-12E8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT SIXPACK RBSOA 1200V E3
More Detail: IGBT Module NPT Three Phase Inverter 1200V 130A 50...
DataSheet: MWI75-12E8 datasheetMWI75-12E8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 1.1mA
Base Part Number: MWI
Supplier Device Package: E3
Package / Case: E3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 5.7nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Power - Max: 500W
Current - Collector (Ic) (Max): 130A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter
IGBT Type: NPT
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A MWI75-12E8 is a type of IGBT module, which stands for Insulated Gate Bipolar Transition. It is a type of transistor that is used as an electronic switch to control electric current and is made up of two distinct regions; an insulated gate region and a junction field-effect transistor region. This type of transistor is suitable for use in many applications, such as power amplifiers, inverters and motor drives. In addition to its usefulness for electronic switching, the IGBT module offers a number of other benefits.

The MWI75-12E8 is a type of surface-mountable IGBT module. This means that it can be mounted directly onto a printed circuit board without the need for any additional components. This allows for a compact design and easy integration into electrical systems. The module offers a number of other advantages in addition to its surface-mountability, including a low saturation voltage, low switching losses and good thermal dissipation.

The working principle of the MWI75-12E8 is based on its construction as an electronic switch. It uses a small high voltage to control a large current. The module has two distinct regions; the collector and the emitter. The collector is connected to the power source, while the emitter is connected to the load. The base voltage is used to control the current flowing between the collector and the emitter. When the base voltage is increased, the current flowing between the collector and the emitter increases, and when the base voltage is decreased, the current decreases. This is known as the “on-off” principle of the module.

The MWI75-12E8 is suitable for a number of applications, such as power amplifiers, power supplies and motor drives. In many of these applications, the IGBT module provides a number of advantages over other types of transistors. These include a higher breakdown voltage, low saturation voltage and low switching losses. Additionally, the module has a good thermal dissipation and requires no external heatsink, making it well suited for many power supply applications.

The MWI75-12E8 is a versatile, reliable and efficient IGBT module, capable of providing benefits to a variety of applications. As a surface-mountable device, it can offer a compact and cost-effective solution for many electronic switching needs. With a number of benefits, including low saturation voltage, low switching losses and good thermal dissipation, the MWI75-12E8 is an excellent choice for power supply and motor drive applications.

The specific data is subject to PDF, and the above content is for reference

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