MX1.5KE91AE3 Allicdata Electronics

MX1.5KE91AE3 Circuit Protection

Allicdata Part #:

1086-9292-ND

Manufacturer Part#:

MX1.5KE91AE3

Price: $ 17.83
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 77.8V 125V CASE-1
More Detail: N/A
DataSheet: MX1.5KE91AE3 datasheetMX1.5KE91AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 16.20910
Stock 1000Can Ship Immediately
$ 17.83
Specifications
Voltage - Clamping (Max) @ Ipp: 125V
Supplier Device Package: CASE-1
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 12A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 86.5V
Voltage - Reverse Standoff (Typ): 77.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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A Transient Voltage Suppressor Diode, also known as a TVS Diode, is a special type of diode that helps to protect electrical circuits from Transient Voltage Spikes. Transient Voltage Spikes (TVS) are electrical surges that can occur in electrical circuits due to a variety of reasons, such as lightning, switching, or other sources of high voltage. The most common type of TVS Diodes are the unidirectional type, which is also known as a Zener Diode. Unidirectional TVS Diodes are designed to allow current to flow in one direction, and to block current flow in the other direction. This type of TVS Diode is often used in electronic circuits to protect electrical components from Damage due to voltage spikes.

The MX1.5KE91AE3 is a unidirectional TVS Diode designed to protect electronic circuits from voltage spikes. This device features a peak pulse power of 1100 Watts, and a breakdown voltage of 91 Volts. This diode has a surge clamping voltage of 31 Volts, and is designed to operate at a maximum current of 400 mA. The MX1.5KE91AE3 is rated for a power dissipation of 375 mW, and is suitable for applications that require a high-performance TVS Diode.

The MX1.5KE91AE3 can be used in a variety of applications, such as automotive, industrial, and telecom applications. This device can be used in automotive applications to help protect electrical components from voltage surges caused by electrical components such as alternators, starters, and battery chargers. In industrial applications, this diode can be used to help protect electrical components from voltage surges caused by switching equipment or other electrical sources. In telecom applications, this diode can be used to help protect electrical components from voltage surges caused by lightning strikes, or other sources of high voltage.

The working principle of the MX1.5KE91AE3 is based on n-type silicon construction. When a voltage surge is detected, this diode becomes conductive and will begin to pass current in one direction, while blocking current in the other direction. This allows the diode to absorb energy and dissipate it as heat, effectively protecting the electrical components from Damage caused by the voltage spike. The diode is designed to operate with a maximum current of 400 mA, with a peak pulse power of 1100 Watts. This allows the diode to effectively absorb energy and dissipate it as heat, ensuring that no Damage is caused to the electrical components.

The MX1.5KE91AE3 is a robust and reliable unidirectional TVS Diode that is designed to help protect electrical components from voltage surges. This device is suitable for a variety of applications such as automotive, industrial, and telecom applications. It features a breakdown voltage of 91 Volts, a surge clamping voltage of 31 Volts, and is capable of withstanding a maximum current of 400 mA. The diode is rated for a peak pulse power of 1100 Watts, and a power dissipation of 375 mW. The working principle of this device is based on n-type silicon construction, and allows for the effective absorption and dissipation of energy from voltage surges.

The specific data is subject to PDF, and the above content is for reference

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