MX25L1606EMI-12G

Series:	MX25xxx05/06
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	16Mb (2M x 8)
Clock Frequency:	86MHz
Write Cycle Time - Word, Page:	50µs, 3ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	16-SOP

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<h2>Memory</h2><p>The MX25L1606EMI-12G is a Serial NOR Flash memory used for a wide range of applications, such as consumer electronics and industrial control systems. This type of Flash memory is ideal for applications such as code storage, firmware updates, consumer applications and system initialization for embedded applications that require fast access times and high storage capacity.</p><h3>Application Field</h3><p>The MX25L1606EMI-12G can be used in consumer electronics, embedded systems, industrial control systems and enterprise applications. The MX25L1606EMI-12G is ideal for code storage applications such as firmware updates, consumer applications and system initialization. It is also suitable for industrial control systems and embedded applications that require fast access times and high storage capacity. In addition, the memory can be used in automotive applications such as vehicle navigation systems, fleet management systems and infotainment systems.</p><h3>Working Principle</h3><p>The MX25L1606EMI-12G utilizes a system of two primary electrical signals in order to enable the device to interface with other digital components. The two signals are a Serial Clock signal, also referred to as CLK, and a Serial Data signal, also known as DQ. Together, these two signals form a bi-directional serial bus that allows the MX25L1606EMI-12G to communicate with other digital components. Data stored in the memory can be read or written, depending on the instructions send to the memory through the CLK and DQ signal. The read and write instructions can be single byte instructions or block instructions, depending on the application.</p><p>The Flash-memory also supports multiple read and write operations such as page/subpage read and write, random read, random write and sequential read and write. When reading data from the memory, the data is outputted serially through the DQ signal and the output data rate is determined by the frequency of the serial clock signal. The data is serially clocked out at either 8MHz or 33 MHz, depending on the operating mode. </p><p>The MX25L1606EMI-12G features an Error Correction Code (ECC), which can be used to detect and correct errors that occur during data transfer. The ECC detects single bit errors and corrects errors that are up to one byte in size. This is useful in high-speed data transfer applications, where errors can occur due to interference or noise in the collection of the data. </p><p>In addition, the MX25L1606EMI-12G features a write protection function, which prevents accidental alterations to the data stored in the memory. The write protection can be enabled or disabled on a sector-by-sector basis, allowing for selective write protection of critical data.</p><p>The MX25L1606EMI-12G is a highly efficient and reliable memory technology that provides high speed, large capacity and low-power consumption. It is suitable for a wide range of applications and is ideal for industrial, automotive and embedded applications.</p>

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