Allicdata Part #: | MX25L3255EM2I-10G-ND |
Manufacturer Part#: |
MX25L3255EM2I-10G |
Price: | $ 0.48 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Macronix |
Short Description: | IC FLASH 32M SPI 104MHZ 8SOP |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8) SPI 104MHz 8-... |
DataSheet: | MX25L3255EM2I-10G Datasheet/PDF |
Quantity: | 1000 |
20608 +: | $ 0.43696 |
Series: | MXSMIO™ |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 300µs, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MX25L3255EM2I-10G is a memory device classified as a non-volatile memory (a type of memory that retains its data even when no power is supplied). It is a high-density NOR flash memory device, and is designed for memory intensive applications.
This memory device is constructed using a high-performance, low-power CMOS process that is capable of achieving densities up to 2,560 megabits (Mb). It is composed of 2048 individually programmable memory cells that are organized into 4,096 rows and 256 columns. This arrangement allows for a maximum of 16bits per cell.
The MX25L3255EM2I-10G is available in 2.5V and 3.3V versions and is compatible with SPI-bus, IµC-bus, and other serial standards that employ 3-wire, 4-wire, and/or 8-wire interfaces. It also features an advanced protection circuit that guards against over-voltage, excessive temperatures, and power-on reset conditions. The device is capable of storing up to 256 million bits of data and is equipped with 64-bit vendor and device identifiers.
This memory device is particularly useful in industrial, automotive and consumer applications. It can be used to store information such as software code, OEM settings, configuration values, and other data. The device is also widely used in IoT (Internet of Things e) applications as it offers a means of secure remote monitoring/control and data collection/analysis.
The MX25L3255EM2I-10G functions by utilizing a charge transport mechanism in which the entire cell or bit is programmed or erased in one operation. This process is referred to as “hot programming,” and it is made possible by a circuitry that functions like a silicon switch. Once the cell is programmed, the programming state is retained, even in the absence of power, by utilizing a negative charge stored on the memory cell.
The device also features a built in error correction system which provides error protection, ensuring maximum accuracy and reliability of the data stored in the memory device. Additionally, the device offers flexible features such Deep Power Down, Enhanced ECC (error correction code), Sector Protection, Sequential Programming, and Data Suffix Protection.
In summary, the MX25L3255EM2I-10G is a high-density memory device used in a variety of applications ranging from industrial, automotive, and consumer applications to IoT. It offers excellent data storage and protection, as well as easy programming/erasing and advanced error correction.
The specific data is subject to PDF, and the above content is for reference
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