Allicdata Part #: | 1092-1110-ND |
Manufacturer Part#: |
MX25L512EMI-10G |
Price: | $ 0.32 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Macronix |
Short Description: | IC FLASH 512K SPI 104MHZ 8SOP |
More Detail: | FLASH - NOR Memory IC 512Kb (64K x 8) SPI 104MHz ... |
DataSheet: | MX25L512EMI-10G Datasheet/PDF |
Quantity: | 27724 |
1 +: | $ 0.28350 |
500 +: | $ 0.22379 |
Specifications
Series: | MX25xxx05/06 |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Kb (64K x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 50µs, 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Description
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Memory
MX25L512EMI-10G Application Field and Working Principle
MX25L512EMI-10G is a type of memory designed and produced by Macronix, a renowned semiconductor and flash memory manufacturer in Taiwan. This type of memory offers low operating voltage, fast read/write speed and wide operating temperature, making it suitable for many industrial applications. MX25L512EMI-10G is a particular kind of non-volatile memory that uses electrical signals to store and retrieve data from the chip. It is a type of flash memory and is used in a wide array of electronic-based products. The MX25L512EMI-10G memory has a capacity of up to 512 megabits (Mbits) which is equivalent to 8 megabytes (MB). It operates on a low voltage from 2.7V to 3.6V, with a read/write speed of up to 66/25 MB/s. It is able to operate at a temperature operating range between -40°C to 85°C. The memory is designed to meet the JEDEC and IMB/JESD standards, as well as the Common Flash Interface (CFI) standard.The MX25L512EMI-10G is mainly used in embedded applications such as industrial control systems, automotive infotainment systems, networking equipment and telecommunication systems. It has been designed to be compatible with a wide range of systems, so it can be used in multiple device types. This type of memory is well-suited for use in systems which require a high number of reads and random access operations.The working principle of the MX25L512EMI-10G memory is based on the transfer of electrons using transistor cells. The memory chip consists of an array of individual memory cells, each of which consists of a control gate and two floating gates. The memory cells are combined together in a matrix structure, which allows for accessing individual cells without affecting the surrounding cells.To store data, a voltage needs to be applied to the control gate. This creates a channel of conducting electrons through the floating gates and onto the underlying channel. To read data, the same voltage is applied to the control gate, and the underlying channel is then scanned to determine the location of the stored electrons. The stored data can then be retrieved.The memory is also designed with some built-in features such as the Enhanced Security Features (ESE) and the Sectored Erase feature. The ESE feature provides an additional layer of security by preventing unauthorized access to the memory chip. The Sectored Erase feature makes it easier to erase entire memory segments without having to erase the entire chip.Overall, the MX25L512EMI-10G is a popular choice for non-volatile memory applications. Its small size, low power consumption, fast read/write speed, wide operating temperature range and compatibility with a range of systems make it a preferred choice for embedded applications.The specific data is subject to PDF, and the above content is for reference
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