Allicdata Part #: | MX25L51245GMI-10G-ND |
Manufacturer Part#: |
MX25L51245GMI-10G |
Price: | $ 4.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Macronix |
Short Description: | SERIAL NOR |
More Detail: | Memory IC |
DataSheet: | MX25L51245GMI-10G Datasheet/PDF |
Quantity: | 1000 |
4840 +: | $ 3.64431 |
Series: | * |
Part Status: | Not For New Designs |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an integrating circuit that stores and retrieves digital information important to computer operation. The memory used most often in computers is called random access memory (RAM). RAM is volatile, meaning that stored information remains only as long as power is applied. In addition to RAM, other types of memory are also widely used. One type of non-volatile memory is Flash memory. MX25L51245GMI-10G is a Flash Memory device, widely used in many applications.
MX25L51245GMI-10G is a 512 Mbit (64 Megabyte) which consists of 65,536 pages of 256-byte each. It operates with a single power supply between 1.7V - 1.9V and a maximum clock frequency of 104MHz. The main selling point of the MX25L51245GMI-10G is its ability to be configured as 16Individual 4Mbit devices instead of one single 64Mbit memory device. This feature allows the device to meet the requisites of an ever increasing application field.
Applications of the MX25L51245GMI-10G include a broad range of embedded systems such as automotive, industrial, medical, and consumer electronics.Specifically, it can be used in intelligent car applications, industrial systems,protective switchgear, communication and multimedia applications, intelligent homeappliances and many other areas.
The working principle of the MX25L51245GMI-10G is based on the same principlesas any other type of Flash Memory device. The Flash Memory device is composed ofan array of (floating) floating-gate transistors which store binary information. Electricalcharges are used to charge and discharge these transistors.The writing of informationin Flash Memory devices is done by injecting electrons through an oxide layer, thereby changingthe electrical characteristics of the transistor. The erasing of information isaccomplished by using hot electrons to directly discharge the transistors.
The MX25L51245GMI-10G can be operated in a variety of ways. It supportsthe standard read, program and erase cycles as used in Flash Memory devices. It also supportsa block erase function which erases a block of 64 pages at a time.Thisfunction reduces programming time and improves performance.
The MX25L51245GMI-10G is a versatile Flash Memory device which is suitablefor a variety of applications.Its ability to be configured as a single or multiple 4Mbdevice makes it ideal for applications where a 64Mbit memory device is notappropriate. Its low voltage operation and wide temperature range make it suitablefor a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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