MX25R6435FZAIH0

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MX25R6435FZAIH0 is a type of flash memory developed and manufactured by Macronix. It is widely used in the fields of connected things, embedded system, mobile phone and digital consumer markets. It is the industry\'s first 8V to 5.5V nominally-rated 1.8V device, designed to replace the traditional discrete logic gate or flip-flop chips, providing a higher density, higher Voltage tolerance and lower power consumption.

The MX25R6435FZAIH0 memory has a single-supply voltage range from -1.2 V to 3.7 V, and is able to operate up to 90 degrees centigrade. It is available in a small 8-pin WSON package, XFM package and standard VFBGA68 packages. This memory includes an 8-bit parallel interface, an enhanced-hold release feature, a voltage test pin, an erase/write verification pin, and a security feature for industrial and automotive applications such as automotive gateway, identification and anti-counterfeiting.

In addition, MX25R6435FZAIH0 memory offers a typical 95 mW power consumption and a 150 ns read speed. These memories are 128 Mbit in size and can be divided into two 8M (264) blocks with a maximum write/erase cycle of 10,000 times. It provides a 4 K erase/write block, minimizes the system cost through high-speed programming at the highest speed of 25 MHz, and the convenience of using 6-byte long address mode FPI.

The working principle of MX25R6435FZAIH0 memory is based on the use of electrical charges stored in a floating gate of a metal-oxide-semiconductor (MOS) structure, which are dumped (erased) or programmed (written) into the memory cell through the application of higher voltages on the gate. To erase data stored in MX25R6435FZAIH0, typically a 0 V to 4 V bias is applied to the gate of the cell. To program data into MX25R6435FZAIH0, a higher voltage (10 V) will be applied to the gate of the memory cell.

As for reading flash memory, it is done by applying a bias voltage to the control gate that is in between the source and the drain of the memory cell. The amount of current flowing from the source to the drain will depend on the content of the cell, whether the cell has been programmed or erased. This reading process is referred to as sensing. To read data stored in MX25R6435FZAIH0 memory, a reading process is used which is based on the modified Fowler-Nordheim Tunneling theory. The current flowing through the tunnel diode will depend on the voltage applied to the control gate, and on the potential barrier that is formed by the floating gate.

Overall, the MX25R6435FZAIH0 memory is an important part of modern electronics and has a wide range of applications. It is essential for automotive and industrial applications, as it can provide higher density, higher voltage tolerance and lower power consumption.

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