MX25U1635EZNI-10G

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Memory plays an important role in accelerating and improving the efficiency of computers. MX25U1635EZNI-10G is a new type of memory that is widely used in both industrial and consumer fields. The following article will discuss the application field and working principle of MX25U1635EZNI-10G.

Application Field

MX25U1635EZNI-10G is a low-voltage serial flash memory device with two chip enable pins (CE#1 and CE#2) that is manufactured by Macronix Corporation. The memory is rated for an operating temperature of -40℃ to +85℃, and is available in packages as small as 2.5 x 3.5mm or 6x8mm. These small packages enable the memory to be used in small consumer electronics devices, such as digital cameras and smartphone applications, as well as medical and automotive components with limited space.

The MX25U1635EZNI-10G is a 3V single-voltage memory device that uses a SPI bus interface to allow for fast data transfers. The memory has a wide range of densities, ranging from 16Mbits to 64Mbits, and its flash memory cells are rated for up to 100,000 program/erase cycles.

Working Principle

The MX25U1635EZNI-10G is an SPI-based low-voltage serial flash memory device. It features two chip enable pins (CE#1 and CE#2), allowing users to select one of four different banks and access the memory. The memory is organized into blocks, and each block is divided into pages. Each page consists of 256 bytes of data and one byte of metadata, for a total of 257 bytes per page.

The MX25U1635EZNI-10G has two types of operations: Read and Program/Erase. The read operation can be used to read data from any location in the memory, while the Program/Erase operation is used to write data to and erase data from locations in the memory. The Program/Erase operation is the most time-consuming, as it requires several steps to program or erase one byte of data.

When programming data, the memory is first erased and then a write-enable pulse is applied to initiate the program operation. The write-enable must be applied before each byte is programmed. Each byte is programmed bit by bit, with the “1” bits programmed first and then the “0” bits. Finally, a Program-Enable pulse is applied to confirm the program operation.

When erasing data, a high voltage level (12V) pulse is applied to the Erase Input pin. The Erase Input must be applied before each byte is erased. The erase operation is similar to the programming operation, except that the Program-Enable pulse is replaced with an Erase-Enable pulse. Once the Erase-Enable is applied, the erase operation is completed.

Conclusion

MX25U1635EZNI-10G is a low-voltage serial flash memory device with two chip enable pins, making it suitable for a wide range of applications. The memory is organized into blocks and pages, and can be read and programmed/erased in a variety of ways. This makes the memory suitable for both industrial and consumer applications. With its small package size and wide range of densities, MX25U1635EZNI-10G is an ideal memory solution for many applications.

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