MX25U51245GZ4I

Series:	MX25xxx45 - MXSMIO™
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	60µs, 750µs
Memory Interface:	SPI - Quad I/O, QPI, DTR
Voltage - Supply:	1.65 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (8x6)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MX25U51245GZ4I Memory

MX25U51245GZ4I is a type of memory, which is usually used as high-density, versatile embedded non-volatile memory. MX25U51245GZ4I memory is a component for systems with limited space, low power consumption, high performance and low cost.This memory is suitable for a number of different application fields, including automotive, industrial, medical, computing, consumer and communications applications. MX25U51245GZ4I can be used in a wide range of memory applications, including code storage, secure data storage, continuous recording and sensing, data logging, and secure identifier management.The MX25U51245GZ4I non-volatile memory is based on the IEEE/ANSI single-chip flash memory architecture. The chip features an embedded controller which provides enhanced features such as full command set, built-in error correction and high-speed read. The MX25U51245GZ4I memory is organized into M Bytes of memory density with 0x1400 to 0x1BFF data command registers, 256 x 16-bit ROM and 4K x 8-bit SRAM.In terms of working principle, MX25U51245GZ4I memory relies on a standard write-cycle sequencing. The memory consists of a block of memory that can be read, programmed and erased in an array of 256 cells. Data is written to the memory in the form of bytes, each 8-bits long. Programming is accomplished by writing an "enable" bit to enable the programming process, then writing the data to the memory. The erase process follows a similar pattern, except the erase bit must be set in order to erase the memory. Once the write or erase process has been completed, the memory can be read from or written to again.In addition, the MX25U51245GZ4I memory also provides advanced features such as sector protection for user-defined sectors, enhanced security functions against data tampering, the ability to set sector or even chip locks, and mini-programs for user-defined functions. The memory also provides additional security functions such as production lock, password protection and write cycle limit protection.The MX25U51245GZ4I memory also brings with it efficient power consumption – is typically rated at less than 1µA (microampere) read current, 0.7µA erase current, and 0.5µA write current. This makes it an ideal choice for low power applications. Finally, the memory features an operating temperature range of -40 to 85 deg C, suitable for most operational needs.Overall, MX25U51245GZ4I memory is a versatile, low power chip-level memory solution suitable for automotive, industrial, medical, computing, consumer, and communications application fields. It features an advanced set of features such as sector protection, security functions, and low power consumption, making it an ideal choice for most applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description