MX25U6435FZNI-10G

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MX25U6435FZNI-10G is an 8-megawatt flash memory. It belongs to the family of MX25M-series of flash memories, and is believed to be sold as a feature-rich memory. The MX25M-series is a high-density Flash memory device manufactured by Micron Semiconductor and is suitable for automotive, industrial, and embedded applications which require non-volatile memory.

Application Field

MX25U6435FZNI-10G is a high-density Flash memory device specifically designed for automotive, industrial, and embedded applications which require non-volatile memory. This device integrates a single-bit output 1 Gb serial Flash with dual SPI and dual I2C interfaces. It also comes with an integrated 256-bit wide boot block for secure boot applications with advanced features that provide robust semiconductor assistance for data storage.

This memory can be used in a variety of applications, including automotive flash memory, consumer electronics, industrial control systems, embedded systems, and consumer applications. Its highly advanced features make it well-suited to any application where data must be stored reliably and securely.

MX25U6435FZNI-10G offers a wide temperature range operating temperature of -40° to +85° C and a highly integrated semiconductor assistance for data security. It also has a fast programming time including sector erase and a 10-MHz clock cycle to ensure high performance. In addition, it has an industrial temperature compatible version MX25U6335FWNC-G.

Working Principle

MX25U6435FZNI-10G uses FLASH memory technology. It uses an array of transistors, arranged in rows and columns, to store information. The transistors are connected to a word line, which is used for the reading and writing of the data. Each word line connects to a source line, which is used to supply power to the transistor. Each source line is connected to a bit line, which is then connected to the desired address.

When writing data to the MX25U6435FZNI-10G, the word line is activated to allow a source line to be sent to the desired address. This causes the transistor to become charged and the data to be stored. When reading data, the word line is activated and the stored data is read from the bit line. The data is then decoded and stored by the chip.

MX25U6435FZNI-10G is an ideal choice for applications requiring high reliability, low power consumption and advanced security features. The device has an integrated 256-bit wide boot block, which provides robust semiconductor assistance for data security. It also has a fast programming time, which includes sector erase and a 10-MHz clock cycle to ensure high performance. In addition, it has an industrial temperature compatible version MX25U6335FWNC-G.

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