MX35LF1GE4AB-Z2I

Memory: MX35LF1GE4AB-Z2I Application field and Working Principle

MX35LF1GE4AB-Z2I is an SPI-compatible read/write Flash memory device, which is suitable for a variety of applications, including in industrial and medical products, such as automotive engine control, power management systems and medical instruments.

This Flash memory device consists of a one-time programmable memory unit and a high-performance embedded NAND Flash memory cell array, comprising billions of cells. The one-time programmable memory is composed of an integrated circuit comprising a peripheral decode logic communicating with the memory unit. The one-time programmable memory unit can be used to store configuration and application data, with up to 128 kilobytes of storage capacity.

The main features of the MX35LF1GE4AB-Z2I Flash memory include data transfer rates up to 166 Mbps, four bytes of write protection, sector protection up to 512 Kbytes, and up to 32 Gbits of total storage capacity. It also supports quad-SPI and dual-SPI bus protocols, which provide faster data transfer rates than the traditional single-SPI protocol.

Working principle

The MX35LF1GE4AB-Z2I Flash memory device is designed to store data in non-volatile memory, meaning that data remains stored even when power is removed. It works by using memory cells that are embedded into the chip and can store data bits in an array. Each bit is determined by the capacity of the memory cell that has been charged by an electrical current.

In order to write data to the memory, the electrical charge of the memory cell must be widened by running a voltage over the memory cell, allowing it to store more bits. When the memory is written, it is read by the microcontroller, which reads the state of the memory cell and determines the corresponding data bit.

In order to erase the memory, a high voltage is applied to the memory cell, which removes the electrical charge from the memory cell, thereby erasing the data stored in it. After the erase cycle, the electrical charge of the memory cell is reset to the initial state and the flash memory is ready for writing new data.

In order to ensure reliable data storage, the MX35LF1GE4AB-Z2I Flash memory device is designed with error correction and data integrity checks, which verify the integrity of the data stored in the memory cells.

Applications

The MX35LF1GE4AB-Z2I Flash memory is widely used in a variety of applications, including in Industrial and medical products, and Automotive engine controls, power management systems and medical instruments. This memory is also used in storage and communication systems, as well as in general-purpose microcontrollers, where high-speed data transfer and data storage are required.

In wireless communication systems, the MX35LF1GE4AB-Z2I Flash memory is used to store frequencies, commands, and credentials. In storage systems, it is used to store large amounts of data that require fast reading and writing speeds. It is also used to store firmware in embedded devices, such as a microcontroller, where a certain level of data integrity and reliability is required.

The MX35LF1GE4AB-Z2I Flash memory is a high-performance and reliable device that provides high-speed data transfer rates and is suitable for use in a variety of applications.