MX66L1G45GMI-10G

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MX66L1G45GMI-10G is a type of semiconductor memory products known as low-power Double Data Rate 4 (LPDDR4) SDRAM. This type of memory is particularly well-suited for applications requiring high-bandwidth and a low output voltage. As a double data rate product, the MX66L1G45GMI-10G can operate at twice the frequency of single data rate memories, giving it an advantage over traditional memory products for applications requiring high bandwidth. Additionally, the MX66L1G45GMI-10G features an ultra low-power and low-voltage design, making it particularly useful for applications in mobile and embedded devices.

The MX66L1G45GMI-10G is a Micron product which features 8Gbit capacity, 1024Mb internal organization, and 10ns access time. The memory operates at 1600MHz, and it is rated at up to 20W. The memory is provided in a 64x 68-ball ball grid array (BGA) package, which is compatible with all standard BGA packages. The MX66L1G45GMI-10G operates at an output voltage of 1.2V, making it low-power and suitable for applications requiring the lowest possible power dissipation.

The primary use of the MX66L1G45GMI-10G is as an external memory chip used in a variety of applications, such as mobile telephones, tablets, PDAs, set-top boxes, digital cameras, and other embedded devices. The memory provides fast data storage and retrieval capabilities while consuming very little power. Additionally, the low-voltage output of the MX66L1G45GMI-10G makes it suitable for use in devices which use 3.3V logic, such as 3G and 4G handsets.

The working principle of the MX66L1G45GMI-10G is based on a synchronous SRAM design. The memory consists of two ports for accessing data. The first port is used for writing data to the memory, while the second port is used for reading data from the memory. The two ports are connected to a double data rate (DDR) interface which allows the memory to operate at twice the frequency of a single data rate memory. The memory is also capable of executing multiple transactions in parallel.

The MX66L1G45GMI-10G has a number of features which make it attractive for use in a wide range of applications. These features include a burst length of up to 8, bidirectional data strobes, burst on-the-fly support, and auto-precharge modes. Additionally, the memory is available in a variety of package sizes and types, making it suitable for use in a variety of systems.

In summary, the MX66L1G45GMI-10G is a low-power Double Data Rate 4 (LPDDR4) SDRAM designed for high-bandwidth applications with a low output voltage. The memory is particularly well-suited for use in mobile and embedded devices, and is available in a variety of package sizes and types. The memory utilizes a synchronous SRAM design and features a burst length of up to 8, bidirectional data strobes, burst on-the-fly support, and auto-precharge modes. The MX66L1G45GMI-10G is a reliable and cost-effective choice for use in embedded memory applications.

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