MXLP4KE11A Allicdata Electronics

MXLP4KE11A Circuit Protection

Allicdata Part #:

1086-10247-ND

Manufacturer Part#:

MXLP4KE11A

Price: $ 7.62
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 9.4V 15.6V DO204AL
More Detail: N/A
DataSheet: MXLP4KE11A datasheetMXLP4KE11A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.92187
Stock 1000Can Ship Immediately
$ 7.62
Specifications
Voltage - Clamping (Max) @ Ipp: 15.6V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 26A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 10.5V
Voltage - Reverse Standoff (Typ): 9.4V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppressors (TVS) diodes are widely used in many consumer, industrial, automotive and other applications to protect electronics from voltage surges. The MXLP4KE11A is one such diode designed to protect against transient surges over a wide range of voltage and temperature ranges. The device is often referred to as a “TVS − Diode”.

The MXLP4KE11A is a low-capacitance, low-power surface mount diode specifically designed to protect against overvoltage transients. It has a voltage breakdown of 8.0V and a clamping voltage of 11.4V. It has a reverse leakage current of 500nA and a surge current specification of 11A. The device has a maximum peak power dissipation of 4W.

The device is typically used to protect sensitive electronics from high voltage transients/spikes from external sources, such as lightning strikes, power surges, electrostatic discharge, or other forms of electrical energy. The device may also be used as a current protection component in low voltage applications, where the device will act as a short-circuit current limiter.

The MXLP4KE11A operates on the principle of avalanche breakdown. This occurs when an electric field in a reverse-biased PN junction is strong enough to cause electrons and holes to break away from their respective energy bands. This creates a conducting path from anode to cathode that is used to absorb electro-magnetic energy.

The device is constructed with a silicon PN junction that allows it to handle voltages up to 11.4V. The junction can be thinned down to create a low capacitance junction that helps reduce noise and overvoltage transient spikes. This device also offers protection against ESD events, as the reverse-biased PN junction helps to dissipate the static energy before it can become a surge.

A similar device is the MXS7KE11A. This is a high voltage TVS diode, which has a voltage breakdown of 7.0V and a clamping voltage of 11.4V. It has a reverse leakage current of 500nA and a surge current of 11A. Like the MXLP4KE11A, it is also designed to protect against transient surges.

The MXLP4KE11A is a very versatile device that is suitable for protecting sensitive electronics from transient overvoltages in a wide range of applications, including automotive, industrial, consumer and military. The device offers protection from overvoltage transients, ESD, and high-energy spikes, helping to maintain system integrity and expensive electronics.

The specific data is subject to PDF, and the above content is for reference

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