MXLP4KE68CAE3 Allicdata Electronics

MXLP4KE68CAE3 Circuit Protection

Allicdata Part #:

1086-10378-ND

Manufacturer Part#:

MXLP4KE68CAE3

Price: $ 8.09
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 58.1V 92V DO204AL
More Detail: N/A
DataSheet: MXLP4KE68CAE3 datasheetMXLP4KE68CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 7.35301
Stock 1000Can Ship Immediately
$ 8.09
Specifications
Voltage - Clamping (Max) @ Ipp: 92V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 4.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are components that are used to protect sensitive electronic components from voltage transients. The MXLP4KE68CAE3 is one such diode used for this purpose. It is an advanced high-capacitive transient voltage suppressor diode which is designed to protect sensitive electronic components from over-voltage transients. It is one of the most popular choices for protection from voltage transients since it has higher clamping voltage and peak surge current than other types of TVS diodes.

The MXLP4KE68CAE3 is a small-signal diode that can be used to protect against over-voltage transients, prevent voltage-over-shoots and protect high-speed phone lines, memory modules, serial ports, and USB ports. It is an ideal choice for preventing reversed polarity or high voltage transients. The rating of the diode is 6.8V, which is suitable for 3.3V, 5V, and 12V systems. It has low capacitance impact and an excellent ESD protection rating.

The working principle of the MXLP4KE68CAE3 is based on the avalanche breakdown effect of silicon junctions at high electric fields. When a reverse voltage is applied to the diode, it begins to conduct a current. This current increases linearly until it reaches the reverse breakdown voltage at which point the diode is said to ‘breakdown’. At this point, the current is diverted to the diode’s low resistance path and the voltage is clamped to a specific level. The diode can now protect the circuit against over-voltage transients.

The MXLP4KE68CAE3 is capable of providing excellent protection in high-power applications due to its high-clamping voltage and peak surge current ratings. This diode can also be used in low-voltage applications such as point of load power supplies. It is also suitable for ESD protection in mobile devices such as cell phones, as well as for protecting memory modules from ESD damage.

The MXLP4KE68CAE3 is a popular choice for applications requiring transient voltage suppression due to its high ESD protection rating, low capacitance impact, and high surge current ratings. The diode also provides excellent protection in power applications due to its high-clamping voltage. Its low capacitance impact makes it an ideal choice for protecting memory modules and mobile devices from ESD damage. The MXLP4KE68CAE3 is an ideal choice for transient voltage suppression in applications ranging from low-voltage to high-power applications.

The specific data is subject to PDF, and the above content is for reference

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