MXLP4KE8.2CAE3 Allicdata Electronics

MXLP4KE8.2CAE3 Circuit Protection

Allicdata Part #:

1086-10390-ND

Manufacturer Part#:

MXLP4KE8.2CAE3

Price: $ 8.13
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 7.02V 12.1V DO204AL
More Detail: N/A
DataSheet: MXLP4KE8.2CAE3 datasheetMXLP4KE8.2CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 7.38990
Stock 1000Can Ship Immediately
$ 8.13
Specifications
Voltage - Clamping (Max) @ Ipp: 12.1V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 33A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

MXLP4KE8.2CAE3 application field and working principle

TVS-diodes, also known as transient voltage suppressors, are devices designed for protection from electrical fast transients such as electrostatic discharge, lightning, or inductive load switching. Their primary purpose is to protect semiconductor components such as diodes, transistors, and integrated circuits from voltage transients. These devices come in a variety of shapes and sizes, and offer a range of voltage and power ratings, depending on the application.

The MXLP4KE8.2CAE3 is a low-capacitance transient voltage suppression diode designed specifically for lightning protection and high energy ESD events. It is designed with a reverse breakdown voltage of 8.2V and a maximum peak pulse power dissipation of 0.25W, making it suitable for various lightning protection applications. The device has a very low capacitance of 0.01 pF, making it suitable for applications requiring high signal-to-noise ratios. The device also has an IEC 61000-4-2 Level 4 ESD rating, making it an ideal choice for ESD sensitive applications.

The operation of a TVS-diode is based on the principle of reverse-biased avalanche breakdown. When the voltage across the diode reaches a certain level, carriers become accelerated over the reverse-biased junction, producing electron-hole pairs which cause an avalanche breakdown of the reverse-biased junction. The resulting parasitics generate an opposing field across the junction, thus reducing the applied voltage. This action suppresses the voltage transient.

The MXLP4KE8.2CAE3 is especially suitable for applications such as automotive, medical electronics, and communications equipment, where lightning strikes and high ESD events are a concern. The device is rated for a wide temperature range of -55°C to +150°C, and is RoHS compliant. The device is also UL certified and meets all relevant international standards.

In conclusion, the MXLP4KE8.2CAE3 is an ideal choice for the protection of semiconductor components in applications where lightning and high ESD transients are a concern. With its low capacitance and wide temperature range, the device is suitable for a variety of applications and will provide reliable protection to valuable elements in the system.

The specific data is subject to PDF, and the above content is for reference

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