MXLP4KE82AE3 Allicdata Electronics

MXLP4KE82AE3 Circuit Protection

Allicdata Part #:

1086-10392-ND

Manufacturer Part#:

MXLP4KE82AE3

Price: $ 7.62
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70.1V 113V DO204AL
More Detail: N/A
DataSheet: MXLP4KE82AE3 datasheetMXLP4KE82AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.92187
Stock 1000Can Ship Immediately
$ 7.62
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 3.5A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 77.9V
Voltage - Reverse Standoff (Typ): 70.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes are diodes that are used to protect electronic circuits from overvoltage transients. The MXLP4KE82AE3 is a TVS diode with 600W peak power dissipation, 200W of continuous power dissipation, and a working voltage of 4.2V-82V. It is commonly used to protect circuits from transients that are caused by ESD, electrical surges, and other sources of electrical noise. The MXLP4KE82AE3 is a robust and reliable protection device, and is designed to mitigate the most common failures caused by overvoltage transients.

The MXLP4KE82AE3 is a dual common mode diode array built on an integrated circuit. It is designed to protect the entire circuit from both positive and negative transients. It uses two diodes in a common-mode configuration, with one diode providing protection for the positive transient and the other diode providing protection for the negative transient. The device also features a breakdown voltage of 82V, allowing it to protect circuits from higher voltage transients than other devices can handle. The low reverse leakage property of the diode also helps to reduce power consumption by limiting the current flow when the transient protection circuit is inactive.

The MXLP4KE82AE3 can be used in a wide variety of applications, from automotive to consumer electronics. It is also suitable for use in high-frequency applications such as data converters and RF circuits, as it can withstand high-frequency transients without sacrificing circuit protection. The device is also designed to minimize the risk of false clamps by ensuring that the diode holds up even when an unexpectedly high transient is applied.

The working principle of the MXLP4KE82AE3 is based on the fact that when a voltage greater than the breakdown voltage of the device is applied across its terminals, a breakdown current is allowed to flow, causing the device to conduct. This flow of current then clamps the transient voltage to a safe level, protecting the circuit from damage. The device is designed to limit the clamp voltage to a safe value, typically the breakdown voltage of the device or a slightly lower voltage, depending on the application.

Overall, the MXLP4KE82AE3 is an excellent choice for protecting a variety of circuits from overvoltage transients. It is reliable and robust, and can protect circuits from both positive and negative transient spikes. It can also withstand high-frequency transients without sacrificing protection, making it suitable for high-frequency applications. Its low reverse leakage property helps to reduce power consumption, while its breakdown voltage provides sufficient protection from transients.

The specific data is subject to PDF, and the above content is for reference

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