MXLP5KE110CAE3 Allicdata Electronics

MXLP5KE110CAE3 Circuit Protection

Allicdata Part #:

1086-10414-ND

Manufacturer Part#:

MXLP5KE110CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V DO204AL
More Detail: N/A
DataSheet: MXLP5KE110CAE3 datasheetMXLP5KE110CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 2.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes are often used to protect circuits against electrostatic discharge (ESD) and other forms of overvoltage transients, and are increasingly being used in a variety of applications beyond ESD protection. The MXLP5KE110CAE3 is one such device, and is specifically designed to protect electronic equipment from electrostatic discharge and to safeguard operating electronic equipment from destructive transients.

The MXLP5KE110CAE3 is built using a monolithic, hybrid construction consisting of a back-to-back avalanche diode, and low-capacitance bipolar transistor array. The diode array is bipolar, which means it contains both positive and negative polarity breakdowns. This provides an avalanche protection capability that is rated to withstand ESD pulses up to 18 kV. The low-capacitance Si bipolar transistor, on the other hand, functions as a fast switch for asymmetrical overvoltage protection.

In operation, the MXLP5KE110CAE3 acts as a clamp device, preventing ESD voltage and other transients from reaching sensitive electronic components. When an ESD pulse is present, the avalanche diodes initiate and absorb the surge current, effectively clamping the voltage at a safe level below the voltage rating of the device. This provides protection from the potentially damaging effects of the surge. When an overvoltage transient is present, the bipolar transistor rapidly turns on, clamping the voltage at a safe level. The combination of the avalanche diode and low-capacitance bipolar transistor allows the MXLP5KE110CAE3 to effectively provide both ESD and overvoltage protection.

The MXLP5KE110CAE3 is suitable for a wide variety of applications, including computer peripherals, cellular phone transceivers, and instrumentation. It can be used in automotive, consumer electronics, and industrial applications, as well as any device where ESD and overvoltage protection are required. To optimize protection in a circuit, the device should be connected so that it is in parallel with the protected circuit and placed as close as possible to the point of power entry. It is also important to ensure that the device is not shorted or overloaded.

In short, the MXLP5KE110CAE3 is a state-of-the-art TVS diode designed to provide both electrostatic discharge and overvoltage protection in a wide variety of applications. Its monolithic, hybrid design enables it to effectively absorb surge current and clamp the voltage at a safe level, protecting sensitive electronics from potentially damaging transients. Additionally, its universal application range makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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