Allicdata Part #: | 1086-10470-ND |
Manufacturer Part#: |
MXLP5KE20CAE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 20V 32.4V DO204AL |
More Detail: | N/A |
DataSheet: | MXLP5KE20CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 32.4V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 15.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 22.2V |
Voltage - Reverse Standoff (Typ): | 20V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (Transient Voltage Suppressor) diodes are semiconductor devices that protect sensitive electronic components from excessive voltage, usually caused by electrostatic discharge (ESD) or EMI (Electro-Magnetic Interference). The MXLP5KE20CAE3 is a unidirectional TVS diode that is used to protect high-speed signals against ESD events.The MXLP5KE20CAE3 contains a monolithic avalanche diode with integrated overvoltage protection and a reverse diode for in-circuit protection.
The MXLP5KE20CAE3 has a wide range of applications, from protecting high-speed data lines in consumer devices to providing in-circuit protection in industrial test systems. It can also be used for protecting internal components and circuit boards from damage caused by ESD events. The device is also suitable for protection of automotive electronics, charging systems and telecommunications equipment. It is capable of handling up to 30 Amps of continuous current at a maximum breakdown voltage of 20V.
The working principle of the MXLP5KE20CAE3 is based on the avalanche breakdown phenomenon. When the voltage between the diode’s anode and cathode exceeds its breakdown voltage, the electrons in the diode are accelerated to high speeds and collide with each other, creating additional electrons and positive and negative carriers. This creates a self-sustaining avalanche current, which is what protects the device from overvoltage damage. The MXLP5KE20CAE3 is designed to operate in a reverse-biased mode, so when the voltage between the anode and cathode is increased, the avalanche current will increase exponentially until the maximum reverse breakdown voltage is reached.
The main advantages of using the MXLP5KE20CAE3 TVS diode are its low capacitance, low clamping voltage and high surge capability. Its low capacitance improves signal integrity by minimizing the effects of parasitic capacitance, while its low clamping voltage ensures that the protected device will not be damaged by excessive voltage. The high surge capability allows the diode to absorb large amounts of energy during EMI events and prevent them from affecting the device.
In conclusion, the MXLP5KE20CAE3 TVS diode is an ideal solution for protecting high-speed signals against ESD and EMI events. Its wide range of applications, low capacitance, low clamping voltage and high surge capability make it an ideal choice for protecting sensitive electronic components.
The specific data is subject to PDF, and the above content is for reference
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