MXLP5KE43A Allicdata Electronics
Allicdata Part #:

1086-10503-ND

Manufacturer Part#:

MXLP5KE43A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 43V 69.4V DO204AL
More Detail: N/A
DataSheet: MXLP5KE43A datasheetMXLP5KE43A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 69.4V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 7.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 47.8V
Voltage - Reverse Standoff (Typ): 43V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS diodes are an essential component in the world of circuit design. The MXLP5KE43A is a popular TVS diode that is often used in both consumer and industrial applications. It is a robust and reliable model that provides outstanding protection for sensitive electronics from electrostatic discharge (ESD) and electrical fast transients (EFT). The device also helps to protect against over/under voltage conditions and voltage surges.

The MXLP5KE43A TVS diode has a remarkable combination of low capacitance, low leakage, and high peak pulse power capability. This makes it an excellent choice for protecting sensitive electronics from voltage and current induced transients. The device also offers superb clamping capabilities to ensure optimal protection for the connected device. In addition, the device is designed to meet the requirements of IEC61000-4-2 and other compliance standards.

The basic construction of this TVS diode is a reverse-symmetric structure of PN diodes. This helps to enhance the performance of the device and provide effective ESD and EFT protection. Furthermore, it also ensures that the device can withstand ESD pulses of up to 8kV without any permanent damage. The device is capable of handling high surge currents up to 500mA for a single 8/20 microsecond pulse without any relaxation.

The device also features a low clamping voltage of 21V @ surge current waveforms of +12V. This helps to ensure that the device will not interfere with sensitive circuits when exposed to transient voltages and currents. Additionally, the device is able to withstand 125°C operating temperature and offers excellent temperature and humidity stability over the 0-90°C range.

The operating principle of the MXLP5KE43A is relatively simple. When exposed to excessive voltage or current transients, the PN junction becomes forward biased and the device conducts to provide ESD and EFT protection to the connected device. The reverse-symmetric structure then clamps the voltage to the diode’s breakdown voltage to ensure maximum protection for the system.

The MXLP5KE43A is an excellent choice for a wide range of applications. It is commonly used in telecommunications, automotive, medical, power supplies, computers, and consumer electronics. The device is designed for use in environments exposed to higher levels of ESD and EFT threat and can be used in oil production and shipping industries as well. Furthermore, the device can be used in more traditional applications such as fax machines and copying machines.

In summary, the MXLP5KE43A is an advanced TVS diode that provides superior protection for sensitive electronics and components from ESD and EFT. It features a low clamping voltage of 21V as well as a high peak pulse power capability. The device is also available in a wide range of packages, making it an excellent choice for any application. Furthermore, the reverse-symmetric structure of the PN diodes improves the performance of the device and allows it to withstand higher transient voltages and currents.

The specific data is subject to PDF, and the above content is for reference

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