MXLP5KE85AE3 Allicdata Electronics
Allicdata Part #:

1086-10576-ND

Manufacturer Part#:

MXLP5KE85AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 85V 137V DO204AL
More Detail: N/A
DataSheet: MXLP5KE85AE3 datasheetMXLP5KE85AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 137V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 3.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 94.4V
Voltage - Reverse Standoff (Typ): 85V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppression) diode is an extremely useful component in a variety of electronic applications, and the MXLP5KE85AE3 is a popular choice among designers. Not only is this particular model of TVS diode compact in size and cost effective, but its field of application and working principle are quite straightforward.

The MXLP5KE85AE3 is an ultra-low capacitance, 5V bidirectional ESD protection diode. Most TVS diodes are used for protecting systems from a wide range of overvoltage situations, such as electrostatic discharge (ESD). This is accomplished by installing these diodes on the power and signal lines of sensitive electronic systems, such as computers, mobile phones, and automobiles, to prevent an additional voltage from passing through the system. The MXLP5KE85AE3 is particularly well suited for this application, due to its low capacitance and bidirectional features.

The device\'s working principle is based on the avalanche breakdown effect. This occurs when the reverse voltage across a p–n junction, such as that of a diode, exceeds the device\'s breakdown voltage. During an overvoltage situation, the current of the device begins to increase exponentially as the voltage approaches the breakdown voltage. As soon as the voltage across the diode exceeds this breakdown voltage, a large current flows through the device, injecting energy into the system and suppressing the overvoltage.

The MXLP5KE85AE3 has been widely used in a variety of consumer electronic devices, from smartphones and computers to LCDs and industrial monitors. This particular model of diode is built with a highly reliable design and has an extended service life, making it an ideal choice for critical applications. Its high overcurrent capability and ultra-low capacitance make it a great choice for high frequency scenarios, such as video signals.

In summary, the MXLP5KE85AE3 is an extremely versatile TVS diode that can be used in a wide variety of applications. Its low capacitance and bidirectional properties make it a great choice for ESD protection in a variety of systems. With its high overcurrent capability and extended service life, this particular model of TVS diode is a popular choice among designers for crucial applications.

The specific data is subject to PDF, and the above content is for reference

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