MXLP5KE90CAE3 Allicdata Electronics
Allicdata Part #:

1086-10586-ND

Manufacturer Part#:

MXLP5KE90CAE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 90V 146V DO204AL
More Detail: N/A
DataSheet: MXLP5KE90CAE3 datasheetMXLP5KE90CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 146V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 3.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 100V
Voltage - Reverse Standoff (Typ): 90V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS - Diodes is a type of protective device that provides protection from overvoltage and electrical transients in electronic circuits. The MXLP5KE90CAE3 is a specialized TVS - Diode used in a wide range of industrial applications. This device has been designed to provide robust protection against transients in wide voltage and current ranges.

The MXLP5KE90CAE3 is a bidirectional device that operates in the avalanche breakdown region and is used mainly in telecommunication equipment and in industrial motor control circuits. This device has a three-terminal package which includes the anode, cathode and gate. The anode and cathode terminals are electrically connected together by the integrated thyristor section. The gate terminal is connected to the external control circuit. The plane of the thyristor is normal to the surface of the package and the gate electrode is used to control the on-off state of the thyristor.

The MXLP5KE90CAE3 has a reverse breakdown voltage, VBR, of 90 volts (V) and a maximum peak pulse current, ITM, of 5 kiloamperes (K). This device has a very fast responding time to transients, on the order of 1nS, and it is capable of withstanding extremely high transient voltages and currents while exhibiting low leakage current.

The working principle of the MXLP5KE90CAE3 is based on the principle of avalanche breakdown. In an avalanche breakdown, carriers of a particular type of charge are accelerated in the crystal lattice structure of the semiconductor, creating a state of high steady current. This current effectively short circuits the transient voltage by providing a conduction path. As the transient voltage dissipates, the avalanche current eventually loses its energy and the device returns to its original state, resetting the circuit to provide proper protection.

The MXLP5KE90CAE3 is used to protect electronic circuits from overvoltage caused by lightning, electrostatic discharge or other transient sources. This device is also used in industrial power circuits as a local device to protect against transients in high voltage/high current systems. The MXLP5KE90CAE3 can also be used in automotive circuits where it can protect against overvoltage caused by engine surging and load dumping.

The MXLP5KE90CAE3 is an ideal device for applications where fast-responding protection from transient overvoltage is required. With its low leakage current and fast response time, it provides robust protection while keeping the power supply circuit safe from overvoltage. This device is also highly suitable for industrial applications that require high levels of reliability and safety.

The specific data is subject to PDF, and the above content is for reference

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