MXLP6KE10AE3 Allicdata Electronics

MXLP6KE10AE3 Circuit Protection

Allicdata Part #:

1086-10592-ND

Manufacturer Part#:

MXLP6KE10AE3

Price: $ 7.64
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 8.55V 14.5V T-18
More Detail: N/A
DataSheet: MXLP6KE10AE3 datasheetMXLP6KE10AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.94651
Stock 1000Can Ship Immediately
$ 7.64
Specifications
Voltage - Clamping (Max) @ Ipp: 14.5V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 41A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 9.5V
Voltage - Reverse Standoff (Typ): 8.55V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS Diodes serve as an additional layer of protection for sensitive electronic components against electrostatic discharge and electrical overstress. The MXLP6KE10AE3, a 11.7kA uni-directional TVS Diode, is an example of one such TVS diode that provides surge protection in a multitude of industrial and military applications. This article will cover the working principle behind the MXLP6KE10AE3 Diode, as well as its application field.

MXLP6KE10AE3 Working Principle

MXL Pluggable Surge Protectors, like the MXLP6KE10AE3, provide enhanced surge protection for one or more high speed data lines. It employs a low capacitance structure with a low set voltage. An aluminium oxide breakdown layer, combined with a N-channel MOSFET, is used for bi-directional surge protection. When a surge is encountered, the MOSFET conducting path is created while the TVS diode is used to limit voltages.

When a surge occurs, the breakdown voltage is determined by the avalanche zone of the thyristor. The parameters for this include: Peak Pulse Power, Max Surge and Voltage Stand-off. Whenever the Voltage Stand-off falls below the threshold Voltage Stand-off, the thyristors will begin to conduct, thus allowing current to pass through the protection path. This surge protection path is designed to protect against voltages up to 11.7kA, preventing it from permanently damaging any sensitive components that would otherwise be exposed to surges.

MXLP6KE10AE3 Application Field

The MXLP6KE10AE3 TVS Diode is suitable for a variety of applications, including industrial, automotive, and military. In industrial applications, it can be used in applications such as UPS systems, power inverters, motors drives, and embedded devices. In automotive applications, it can be used in electronic control units, in-vehicle networks, and power supplies. It can also be used to protect sensitive electronic components in military applications.

The MXLP6KE10AE3 TVS Diode is also highly reliable and resistant to shock and vibration. It is also UL and RoHS compliant and meets the requirements of IPC/JEDEC 020D. Its low capacitance ensures an adequately low insertion loss, while its low capacitance ensures an adequately low crosstalk. The MXLP6KE10AE3 is also a low-power device, with an operating voltage of 3-6V and a peak pulse power of 350W.

In summary, the MXLP6KE10AE3 TVS Diode is a uni-directional diode designed to protect sensitive electronic components against electrical over-stresses and surges. Its low capacitance and low power make it suitable for a variety of industrial, automotive and military applications. It meets the requirements of UL and IPC/JEDEC 020D and is highly reliable and resistant to shock and vibration.

The specific data is subject to PDF, and the above content is for reference

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