MXLP6KE27AE3 Circuit Protection |
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| Allicdata Part #: | 1086-10664-ND |
| Manufacturer Part#: |
MXLP6KE27AE3 |
| Price: | $ 7.60 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 23.1V 37.5V T-18 |
| More Detail: | N/A |
| DataSheet: | MXLP6KE27AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.89724 |
| Voltage - Clamping (Max) @ Ipp: | 37.5V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 16A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 25.7V |
| Voltage - Reverse Standoff (Typ): | 23.1V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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Transient Voltage Suppression (TVS) diodes, sometimes referred to as Surge Suppressors, are widely used in automotive as well as medical, industrial and consumer applications to protect vulnerable circuit components from destructive voltage transients. There are numerous types of TVS diodes but all have one thing in common – they are designed to operate by dissipating the energy surge caused by a momentary voltage spike or ElectroStatic Discharge (ESD), often referred to as a transient. The MXLP6KE27AE3 is one of the most common TVS diodes on the market today and is used in many commercial, industrial and automotive applications.
The MXLP6KE27AE3 is a ceramic dual-diode array designed to protect vulnerable circuits from destructive voltage transients. It is commonly used in various commercial, industrial and automotive applications. It features an integrated protection diode (IPD) that is designed to protect sensitive semiconductor components from high-energy transients induced by ESD events. This device is available in a variety of breakdown voltage ratings ranging from 6V to 27V and is available in a package size of 5mm x 5mm SMA with 4 leads.
The primary function of the MXLP6KE27AE3 is to provide protection against voltage transients. This is achieved by dissipating or grounding the energy of the transient event. The device works by clamping the voltage at a specified limit. It is essential for system designers to select the device with the breakdown voltage that matches the system application. The MXLP6KE27AE3 is used in circuitry to prevent destructive voltage transients from affecting sensitive components.
The MXLP6KE27AE3 also provides surge protection, shielding the sensitive components from a wide range of ESD events. This device features a breakdown voltage of 6V, making it suitable for use in a wide range of automotive and consumer applications. This device is electrostatically-challenged from 1500V human body model (HBM) ESD pulse. The device is available with a clamping voltage of up to 27V.
The working principle of the MXLP6KE27AE3 is simple. The device works by intercepting destructive voltage transients and dissipating the energy in the associated inductance. This helps prevent damage to sensitive components and other electronic components by limiting the transient current flow. The working voltage of the device is limited to the breakdown voltage rating, and any excess current is dissipated in the device.
In operation, the device clamps the voltage across its terminals to the breakdown voltage, thus protecting the sensitive components from overvoltage. The MXLP6KE27AE3 is fast in responding to transients, making it suitable for protecting a wide range of applications. The device also features low capacitance, ensuring high reliability and excellent electrical performance.
Since the MXLP6KE27AE3 is designed to be fast in responding to transients, it is also suitable for providing protection against unexpected events such as reverse voltage protection. The device is ideal for use in high-speed data transfer applications, as it can respond very quickly to transient events to prevent data errors.
In conclusion, the MXLP6KE27AE3 is a ceramic dual-diode array designed to protect vulnerable circuits from destructive voltage transients. It is commonly used in commercial, industrial and automotive applications. It is used to provide protection against voltage transients and ESD events by dissipating or grounding the energy of the transient event. The device is designed to have a fast response time and low capacitance to ensure high reliability and excellent electrical performance.
The specific data is subject to PDF, and the above content is for reference
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| MXLP5KE5.0A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9.2V DO204AL |
| MXLP5KE78A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 78V 126V DO204A... |
| MXLPLAD6.5KP130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 130V 209V PLAD |
| MXLPLAD6.5KP160AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 160V 259V PLAD |
| MXLPLAD6.5KP60CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 60V 96.8V PLAD |
| MXLPLAD7.5KP18CAE3 | Microsemi Co... | 9.36 $ | 1000 | TVS DIODE |
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| MXLPLAD18KP40A | Microsemi Co... | 32.22 $ | 1000 | TVS DIODE 40V 64.5V PLAD |
| MXLPLAD18KP15CAE3 | Microsemi Co... | 36.64 $ | 1000 | TVS DIODE 15V 24.4V PLAD |
| MXLPLAD36KP220A | Microsemi Co... | 40.89 $ | 1000 | TVS DIODE 220V 356V PLAD |
| MXLPLAD15KP43AE3 | Microsemi Co... | 33.52 $ | 1000 | TVS DIODE 43V 69.4V PLAD |
| MXLPLAD15KP70CAE3 | Microsemi Co... | 37.46 $ | 1000 | TVS DIODE 70V 113V PLAD |
| MXLPLAD30KP30AE3 | Microsemi Co... | 45.36 $ | 1000 | TVS DIODE 30V 48.8V PLAD |
| MXLPLAD30KP100CAE3 | Microsemi Co... | 53.76 $ | 1000 | TVS DIODE 100V 162V PLAD |
| MXLPLAD30KP120CAE3 | Microsemi Co... | 53.76 $ | 1000 | TVS DIODE 120V 193V PLAD |
| MXLPLAD30KP130CAE3 | Microsemi Co... | 53.76 $ | 1000 | TVS DIODE 130V 209V PLAD |
| MXLP4KE7.5A | Microsemi Co... | 7.64 $ | 1000 | TVS DIODE 6.4V 11.3V DO20... |
| MXLP6KE8.2A | Microsemi Co... | 7.64 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
| MXLPLAD7.5KP12AE3 | Microsemi Co... | 8.91 $ | 1000 | TVS DIODE |
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| MXLPLAD30KP28A | Microsemi Co... | 45.36 $ | 1000 | TVS DIODE 28V 46.4V PLAD |
| MXLP5KE90A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 90V 146V DO204A... |
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| MXLP4KE15AE3 | Microsemi Co... | 7.62 $ | 1000 | TVS DIODE 12.8V 21.2V DO2... |
| MXLP4KE7.5CA | Microsemi Co... | 8.13 $ | 1000 | TVS DIODE 6.4V 11.3V DO20... |
| MXLPLAD7.5KP43CA | Microsemi Co... | 9.61 $ | 1000 | TVS DIODE |
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| MXLPLAD6.5KP18A | Microsemi Co... | 8.9 $ | 1000 | TVS DIODE 18V 29.2V PLAD |
| MXLPLAD18KP17CAE3 | Microsemi Co... | 36.64 $ | 1000 | TVS DIODE 17V 27.6V PLAD |
TVS DIODE 31V 56.4V DO214AB
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TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MXLP6KE27AE3 Datasheet/PDF