MXLP6KE39AE3 Allicdata Electronics

MXLP6KE39AE3 Circuit Protection

Allicdata Part #:

1086-10680-ND

Manufacturer Part#:

MXLP6KE39AE3

Price: $ 7.60
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33.3V 53.9V T-18
More Detail: N/A
DataSheet: MXLP6KE39AE3 datasheetMXLP6KE39AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.89724
Stock 1000Can Ship Immediately
$ 7.6
Specifications
Voltage - Clamping (Max) @ Ipp: 53.9V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 11.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Located within the realm of Surface Mount Technology (SMT) the Transient Voltage Suppression (TVS) Diode provides a unique type of overvoltage protection. Specifically, the MXLP6KE39AE3, is a unidirectional device with low breakdown voltage and fast response time, designed for use in equipment where transient voltages and peak currents must be handled efficiently and effectively.

This diode boasts a maximum device peak power rating of 6 kW, maximum clamping voltage of 40.5 V, and a maximum working voltage of 39 V. It also offers an operating junction temperature range from -65°C – 150°C. These unique characteristics help to make the MXLP6KE39AE3 particularly suitable for products such as cellular phones, laptops, PLLs, and other electronic devices that are designed to work in environments with considerable levels of power transients and electrostatic discharge.

In order to understand how the MXLP6KE39AE3 works, it is important to discuss the characteristics of a typical TVS diode.A TVS diode is essentially a voltage-triggered semiconductor device which is designed to protect a specific component or circuit from voltage and current transients. When the voltage on the protected circuit exceeds the specified breakdown (clamping) voltage of the device, the TVS diode quickly releases an avalanche current and, when needed, redirects the surge from the protected circuit to an alternative ground connection. This prevents damage to the protected component or circuit by dissipating the temporary voltage excursion.

The structure of the MXLP6KE39AE3 particular diode is vastly different to the conventional diode. This is because it is built with an extra layer of semiconductor material which serves as an avalanche diode. This extra layer contains an inherent layer of insulation between the anode and the inbuilt P-N junction. When overvoltage is applied to the circuit, a large current is generated through this avalanche layer, ensuring that the current passes through this layer instead of the main device area. As such, the breakdown of the device is determined by the avalanche breakdown voltage of this internal layer.

In conclusion, the MXLP6KE39AE3 TVS Diode is a robust voltage surge suppression device suitable for use in many types of consumer electronics. It provides excellent protection against overvoltage and fast response time with a low breakdown voltage. Its specific characteristics and built-in protection layers make it a highly efficient device for protecting against transient voltages and peak currents.

The specific data is subject to PDF, and the above content is for reference

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