MXLPLAD15KP160CAE3

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TVS diodes, also known as transient-voltage-suppression diodes, are used to protect sensitive electronic circuits from overvoltage events such as electrostatic discharges, lightning, and other power surges. The MXLPLAD15KP160CAE3 is an example of a TVS diode designed for such applications. This article discusses the application field and working principle of the MXLPLAD15KP160CAE3.

Application Field of MXLPLAD15KP160CAE3

The MXLPLAD15KP160CAE3 is a low capacitance bidirectional transil diode designed to protect electronic equipment against overvoltage transients. It has a low leakage current, low capacitance, and low insertion loss due to its optimized semiconductor structure. This makes it well suited for applications that require high-speed data transmission over long distances, such as Ethernet, Fibre Channel, and computer peripherals. The diode is also well suited for applications that require robust surge protection, such as automotive electronic systems, remote security systems, and energy-related systems.

Working Principle of MXLPLAD15KP160CAE3

The MXLPLAD15KP160CAE3 is a bidirectional transil diode, meaning it contains two diode structures connected in opposite polarities. This allows it to effectively protect against electrostatic discharges, lightning, and other transient overvoltages. When the transient voltage exceeds the diode’s peak reverse voltage, the potential across the diode is reversed and the current is diverted to ground, effectively preventing the transient voltage from reaching vulnerable components.

The diode is composed of a monolithic silicon substrate, a pair of metal electrodes, and two metal oxide semiconductor (MOS) structures. The substrate acts as an insulator between the metal electrodes and the MOS structures. The silicon substrate also helps to reduce capacitance and leakage current. The MOS structures, made from a combination of metal and silicon dioxide, act as the semiconductor in the diode and control the current. When a voltage is applied to the diode, electrons move from the positive electrode to the MOS structure, creating a depletion region. This region prevents the current from being diverted, and the diode becomes conductive. When the voltage reaches the diode’s reverse voltage, the transistor is turned off and the current is diverted to ground.

The MXLPLAD15KP160CAE3 is designed to meet the highest standards of surge protection. It offers 15kA surge protection value for a 10/1000µs surge, and 160V breakdown voltage. This makes it an ideal choice for protecting sensitive electronic circuits in applications where overvoltage transients are a concern.

Conclusion

The MXLPLAD15KP160CAE3 is a low capacitance bidirectional transil diode designed for robust surge protection. Its optimized semiconductor structure offers low leakage current and low insertion loss, making it ideal for applications that require high-speed data transmission over long distances, such as Ethernet, Fibre Channel and computer peripherals. It also provides excellent surge protection, offering 15kA surge protection value and a 160V breakdown voltage. With its high level of protection, the MXLPLAD15KP160CAE3 is an ideal choice for many sensitive electronic applications.

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