MXLPLAD30KP110AE3 Allicdata Electronics
Allicdata Part #:

1086-10920-ND

Manufacturer Part#:

MXLPLAD30KP110AE3

Price: $ 45.36
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V PLAD
More Detail: N/A
DataSheet: MXLPLAD30KP110AE3 datasheetMXLPLAD30KP110AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 41.23130
Stock 1000Can Ship Immediately
$ 45.36
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 30000W (30kW)
Current - Peak Pulse (10/1000µs): 168A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppression (TVS) diodes are unidirectional devices designed to provide protection to sensitive circuits from transients generated by lightning and other voltage sources. TVS diodes are promising solutions, since they can absorb energy from fast rising voltage signals and accordingly provide rapid protection. The MXLPLAD30KP110AE3 is an example of a TVS diode, and is often used for applications such as ESD 24V, EOS protection 24/AC, and EFT/Surge triode protection 24VAC/DC.

The MXLPLAD30KP110AE3 is a diode array, which includes two P6KE110AES transzorbs (Transient Voltage Suppressor) and four SM65Z4.7AT3A-HF SMD transzorbs on a single chip. Currently, it is the smallest SMD diode array of its kind, making it one of the most popular options in the market.

The main purpose of this diode array is to provide instantaneous and effective protection of sensitive electronic systems and devices against overvoltage transients. The device enables the current to safely pass or be shunted towards ground, thus providing protection from voltage spikes. Additionally, it can absorb up to 30kilovolts (KV) of ESD energy, operate up to 5.5amps (A) IPP, and has a response time of less than 1 nanosecond (ns).

The working principle of the MXLPLAD30KP110AE3 is that the voltage across it increases, causing the two P6KE110AES (silicon-controlled rectifiers or SCRs) to activate one after the other and allow current to flow in a direction from the diode which is susceptible to transient overvoltage to an established ground. This shunts the voltage away from the device and providing protection from electrical overstress events (EOS), electrostatic discharge (ESD), and electro-magnetic interference (EMI). Additionally, the four SM65Z4.7AT3A-HF SMD transzorbs are designed to provide additional support against EFT/Surge and pulse protection.

Overall, the MXLPLAD30KP110AE3 is a useful solution for providing effective protection of sensitive electronic systems and devices against overvoltage transients. It comes with many benefits, including low capacitance levels, fast response times, and high performance protection. This makes it an ideal option for applications such as ESD 24V, EOS protection 24/AC, and EFT/Surge triode protection 24VAC/DC, as it is able to efficiently and effectively protect the devices.

The specific data is subject to PDF, and the above content is for reference

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