MXLPLAD36KP70AE3 Allicdata Electronics
Allicdata Part #:

MXLPLAD36KP70AE3-ND

Manufacturer Part#:

MXLPLAD36KP70AE3

Price: $ 40.89
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70V 113V PLAD
More Detail: N/A
DataSheet: MXLPLAD36KP70AE3 datasheetMXLPLAD36KP70AE3 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
100 +: $ 37.17570
Stock 1000Can Ship Immediately
$ 40.89
Specifications
Current - Peak Pulse (10/1000µs): 319A
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 36000W (36kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are an important component in many electrical systems which allow for the safe transmission of electrical energy. The MXLPLAD36KP70AE3 is a type of TVS diode which was specifically designed for use in automobile electronics, such as those found in vehicle entertainment systems, dashboards, and climate control systems. This diode provides efficient and reliable protection from voltage spikes which can occur as a result of power surges, or electrical transients.The MXLPLAD36KP70AE3 is a low capacitance, low leakage, and various voltage standoff type diode. It is an avalanche trigger diode designed for use in both automotive and industrial applications. This diode can withstand up to 18v of reverse voltage, and is capable of operating in temperatures as high as 150°C. When connected in a circuit, it provides transformer and polarity protection.The principle behind the operation of TVS-Diodes is relatively simple. When connected to a circuit, a reverse-biased diode will be placed deep within the avalanche breakdown region. During this process, the junction voltage increases until the reverse-bias current reaches a critical value and causes an avalanche breakdown effect to occur. This avalanche-effect will cause the diode to enter a saturated state, providing a low impedance connection for inductive load protection and enabling the safe and rapid removal of energy from the circuit.The main advantage of using the MXLPLAD36KP70AE3 diodes is that they allow for the rapid removal of energy, preventing any potential damage to a component from happening due to a overload. In addition, because it has a zero temperature coefficient, the MXLPLAD36KP70AE3 diode provides a higher resistance to electric migration and improves its surge-current capability. This means that the diode is able to tolerate higher voltage spikes without failure, providing increased protection for your electrical systems.The MXLPLAD36KP70AE3 can be used in a variety of automotive and industrial applications, such as airbag systems, embedded computer systems, and in electric power systems. It is also used in control panels, which require extra protection against surges, and in industrial networks, where the increased current handling capability of the MXLPLAD36KP70AE3 provides increased protection against faults and short-circuits.Because of its low-capacitance, low-leakage design, and its variety of voltage standoff and reverse voltage ratings, the MXLPLAD36KP70AE3 is an excellent choice when it comes to automotive and industrial applications. With its efficient and reliable protection against voltage spikes and transients, this diode provides performance that can be trusted in any situation.

The specific data is subject to PDF, and the above content is for reference

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