MXLSMBG2K3.3E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transient Voltage Suppression (TVS) diodes, also known as Transient Voltage Clamping devices, are components used to protect voltage sensitive components and circuits from the adverse effects of electrical transients. The MXLSMBG2K3.3E3 is a unidirectional TVS diode that is used for ESD and lightning protection. It can also protect sensitive circuitry from excess voltage pulses, particularly those generated by electrostatic discharge (ESD).

The MXLSMBG2K3.3E3 is constructed from a silicon chip that is coated with glass to provide superior robustness and electrical insulation. Internally the device features a zener diode with two anti-parallel PN-junction avalanche diodes to ensure maximum protection. The device has a maximum peak pulse current of 3000 Amps and a peak pulse power dissipation of 5 Watts with a maximum breakdown voltage of 33 Volts. The peak pulse power dissipation of 5 Watts ensures the device will not fail due to thermal hazard caused by the excess current, allowing it to provide reliable protection in a wide range of applications.

The normal application field for the MXLSMBG2K3.3E3 is the protection of circuits from the damaging and potentially destructive effects of ESD, electrical over-voltage, inductive switching, and lightning. It is also used to provide additional protection against short-voltage transients. In general, these applications require an avalanche diode with fast response times and a high peak reverse leakage current capability. The MXLSMBG2K3.3E3 is ideal for these fields as it features a fast response time of less than 1 nanosecond, a high break voltage of 33 Volts, and a peak reverse leakage current of 500mA.

The MXLSMBG2K3.3E3 is designed to clamp and limit the voltage across it so the attached circuit is not damaged. The device works by quickly dissipating the incoming energy as heat in either the forward or reverse direction. In the case of the former, when a voltage spike exceeds the breakdown voltage of the device the junction semiconductor acts as a conductor. In this state the voltage drop across the device is clamped to the avalanche voltage, ensuring that the adjacent electronics are not exposed to the incoming voltage spike. In the case of the latter, the same process occurs but instead occurs in reverse.

Energy discharge of the MXLSMBG2K3.3E3 occurs very quickly, usually within the first few nanoseconds. This is due to the device’s high peak avalanche current, which is many orders of magnitude greater than its continuous operating current. This allows the device to clamp voltage more effectively, eliminating the threat of voltage spikes in sensitive circuits.

Overall, the MXLSMBG2K3.3E3 is a reliable and efficient Transient Voltage Suppression diode designed for fast response, high peak current, and improved surge protection. It is a necessary device for anyone wanting to protect their electrical circuits from the harmful effects of voltage transients.

The specific data is subject to PDF, and the above content is for reference