MXLSMBG30AE3 Allicdata Electronics

MXLSMBG30AE3 Circuit Protection

Allicdata Part #:

1086-11450-ND

Manufacturer Part#:

MXLSMBG30AE3

Price: $ 7.61
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 30V 48.4V DO215AA
More Detail: N/A
DataSheet: MXLSMBG30AE3 datasheetMXLSMBG30AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.91545
Stock 1000Can Ship Immediately
$ 7.61
Specifications
Voltage - Clamping (Max) @ Ipp: 48.4V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 12.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 33.3V
Voltage - Reverse Standoff (Typ): 30V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient voltage suppression diodes (TVS) are devices used to protect electrical circuits from voltage induced destruction due to various causes such as power surges, electrostatic discharge (ESD), inductive switching, and lightning strikes. TVS diodes are vital components in preserving the longevity of systems prone to these kind of disturbances, and are usually chosen based on the application depending on surge current rating, standoff voltage, peak pulse power rating, and other associated characteristics. Additionally they are rated for various environmental conditions such as temperature, humidity, and salt.

The MXLSMBG30AE3 is one of the many TVS diodes that can be found as protection devices. It is designed for overvoltage protection against high surge transients produced at the positive or negative terminals of semiconductor power circuitries and devices operating in high voltage and high power applications such as DC motors and transformers. The diode is formed of two different structures in the same package - a lower breakdown voltage bipolar transient voltage suppression (BTVS) diode connected in parallel to an avalanche wine-glass zener diode. This combination provides optimal protection from overvoltage transients from the outside environment while still providing excellent clamp performance.

The MXLSMBG30AE3 features an integrated freewheeling diode, which increases efficiency and reduces switching losses during operation. The diode has a peak pulse power rating of 3.4kW at 10/1000 µs, and a clamping voltage of 30V @ 1A. Additionally, it has a breakdown voltage of 28V and a stand-off voltage of 14V. The component also features a low clamping factors (≤ 0.5) and a low stand-off voltage (≤ 10V) for more reliable protection.

The MXLSMBG30AE3 consists of a depletion mode avalanche structure which provides a regulating zener action for rail-to-rail protection. This allows the device to handle higher voltage transients and to clamp voltages down to safer levels. The diode also features an increased ESD capability of 8kV due to its increased breakdown voltage. The package comes in a small 1.6 x 1.2mm DFN footprint for easy integration.

The working principle of the MXLSMBG30AE3 is based on avalanche breakdown or zener breakdown. Avalanche breakdown occurs when a voltage across the junction exceeds a certain level, causing its diode junction to break down. This phenomenon is caused by the high electric field across the junction which accelerates electrons and holes, leading to the collision of electrons and holes which then give off energy in the form of light and heat. This process is known as the avalanche breakdown effect.

On the other hand, zener breakdown is a type of avalanche breakdown that occurs when a voltage across the junction is high enough to create a large number of electrons and holes. As these electrons and holes collide, they create a large number of secondary electrons and holes, creating an avalanche effect which leads to breakdown. The breakdown voltage of a zener diode is typically lower than that of an avalanche diode.

The MXLSMBG30AE3 uses both avalanche and zener breakdown principles to provide effective protection against high voltage transients. The device has an integrated freewheeling diode which allows the device to quickly switch off the excessive energy generated from transient surges, and it also has a low clamping factor (≤ 0.5) and low stand-off voltage (≤ 10V). This combination provides reliable protection from overvoltage transients while also providing excellent clamp performance.

Overall, the MXLSMBG30AE3 is an excellent TVS diode which provides reliable protection from overvoltage transients. It comes in a small DFN package, featuring an integrated freewheeling diode, low clamping factor (≤ 0.5), low stand-off voltage (≤ 10V) and high ESD capability of 8kV. The device utilizes avalanche and zener breakdown to provide excellent protection and features peak pulse power rating of 3.4kW at 10/1000 µs, and clamping voltage of 30V @ 1A. The MXLSMBG30AE3 is an effective and reliable TVS diode that can be used in many different applications.

The specific data is subject to PDF, and the above content is for reference

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