MXLSMBG33CAE3 Allicdata Electronics

MXLSMBG33CAE3 Circuit Protection

Allicdata Part #:

1086-11456-ND

Manufacturer Part#:

MXLSMBG33CAE3

Price: $ 7.18
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33V 53.3V DO215AA
More Detail: N/A
DataSheet: MXLSMBG33CAE3 datasheetMXLSMBG33CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.52667
Stock 1000Can Ship Immediately
$ 7.18
Specifications
Voltage - Clamping (Max) @ Ipp: 53.3V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 11.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

TVS (Transient Voltage Suppression) diodes are devices designed to protect circuits from high voltage transients. They are basically diodes which have a much higher breakdown voltage compared to regular semiconductor diodes. The MXLSMBG33CAE3 is a popular TVS diode from NXP which provides reliable over-voltage protection to a wide variety of applications, ranging from industrial, automotive to consumer electronics.

Application Field of MXLSMBG33CAE3

The MXLSMBG33CAE3 is an automotive grade TVS diode, manufactured using NXP’s proprietary Low Voltage UHF process technology. This diode is specifically designed and tested for over-voltage protection on high voltage lines. Its features include a breakdown voltage range of 6V to 33V with working power dissipation of 200 mW. It has a V min >= 30V, while its peak pulse power dissipation is up to 1.5KW.

The MXLSMBG33CAE3 is widely used in automotive applications due to its high working temperature range of -55°C to 125°C, and maximum junction temperature of 175°C. Additionally, it also offers ESD voltage of up to 8 kV. This makes the diode particularly well suited for protection of automotive high voltage lines, such as power steering, ignition control signal lines, and brake systems.

The MXLSMBG33CAE3 is also often used in consumer electronics, such as laptops, digital cameras and tablets, where its high breakdown voltage and ESD protection can protect delicate user interfaces and CPU\'s from voltage spikes.

Finally, the MXLSMBG33CAE3 is also quite popular in industrial applications, such as line protection, ESD protection and motor control, due to its low capacitance and high ESD performance.

Working Principle

The MXLSMBG33CAE3 is a typical avalanche p-n junction diode, with a breakdown voltage of 6V to 33V. It works by using the avalanche effect when the voltage applied between the anode and the cathode reaches its breakdown voltage. At this point, the current stored in the region between the anode and the cathode will rapidly increase, thus limiting the voltage transients on the protected line.

A TVS diode works differently than a regular clamping diode. This is because it has a higher breakdown voltage and smaller capacitance. A regular clamping diode cannot provide enough current to limit the transient voltage, whereas a TVS diode can. This makes the MXLSMBG33CAE3 ideal for applications requiring protection from high voltage transients.

Conclusion

The NXP MXLSMBG33CAE3 is a versatile automotive grade TVS diode that offers reliable over-voltage protection for a wide variety of applications. Its high breakdown voltage, low capacitance and ESD protection make it an ideal choice for automotive, consumer electronics and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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