MXLSMBG36A Circuit Protection |
|
| Allicdata Part #: | 1086-11457-ND |
| Manufacturer Part#: |
MXLSMBG36A |
| Price: | $ 7.61 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 36V 58.1V DO215AA |
| More Detail: | N/A |
| DataSheet: | MXLSMBG36A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.91545 |
| Voltage - Clamping (Max) @ Ipp: | 58.1V |
| Supplier Device Package: | SMBG (DO-215AA) |
| Package / Case: | DO-215AA, SMB Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 10.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 40V |
| Voltage - Reverse Standoff (Typ): | 36V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MXLSMBG36A is a current-limiting trans-zener diode element of the TVS Diodes. It features an efficient energy absorption capability and the same element can take very high pulse currents and voltage surges on the same package.
It provides an IEC Transient surge protection of up to 8/20 microseconds. This high functionality of the element makes it suitable for LED Driving, Automotive electronics, and TELECOM devices amongst many other applications.
When connected in reverse bias, it exhibits an electronic shuttering characteristic- the breakdown voltage stored in the capacitor is released to ground in the event of a voltage surge. When the surge is large enough to cause a breakdown of the N-layer at the anode of the diode the stored charge is quickly discharged, causing the total current through the device to be limited almost immediately.
The structure of the MXLSMBG36A includes a substrate, N-layer, and anode. To ensure consistent performance over the life of the device, efficient process conditions are maintained. The device is constructed of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) and N-Channel Junction Field Effect Transistor (JFET) layers which share a common gate. This structure provides fast switching and low steady state leakage.
The MXLSMBG36A features a low capacitance (as low as 0.7pF), low trr, and fast switching performance. Because of this fast switching, it can survive voltage surges larger than the rated value without degradation of its performance or damage. When the N-layer is subjected to a voltage surge, the stored energy is quickly released through the anode to ground. This fast switching minimizes the time for which the device is subjected to high current and voltage, which helps the device protect from further damage.
Applications for the MXLSMBG36A include protecting against electrical transients in IEC and Automotive applications. It can also be used to provide protection against power supply brownouts and other transient surges. The small package size also makes it suitable for applications where small size and low weight are key requirements.
In conclusion, the MXLSMBG36A is an element of TVS Diodes suitable for a wide range of applications such as LED Driving, Automotive electronics, and TELECOM devices. It provides an excellent energy absorption capability and fast switching performance which makes it suitable for protecting against transient surges. It features a small size and low weight making it ideal for applications where size and weight are important considerations.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCJ43AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 43V 69.4V DO214... |
| MXLSMBG85AE3 | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 85V 137V DO215A... |
| MXLSMCJ120CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 120V 193V DO214... |
| MXLSMCJ51CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMLJ5.0CA | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 5V 9.2V DO214AB |
| MXLSMLG150CA | Microsemi Co... | 10.03 $ | 1000 | TVS DIODE 150V 243V DO215... |
| MXLSMBG64CA | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 64V 103V DO215A... |
| MXLSMCG40AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMCJLCE15A/TR | Microsemi Co... | 9.04 $ | 1000 | HI REL TVS |
| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
| MXLSMLJ15CAE3/TR | Microsemi Co... | 9.47 $ | 1000 | HI REL TVS |
| MXLSMCGLCE90A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCGLCE60A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCG33CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
| MXLSMBJ100A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMBG7.0CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MXLSMCG58AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
| MXLSMCG64AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 64V 103V DO215A... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MXLSMBG36A Datasheet/PDF