Allicdata Part #: | 1086-11638-ND |
Manufacturer Part#: |
MXLSMBJ2K4.0E3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 4V 6.3V DO214AA |
More Detail: | N/A |
DataSheet: | MXLSMBJ2K4.0E3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 4V |
Voltage - Breakdown (Min): | 5V |
Voltage - Clamping (Max) @ Ipp: | 6.3V |
Current - Peak Pulse (10/1000µs): | 10A (8/20µs) |
Power - Peak Pulse: | 2000W (2kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MXLSMBJ2K4.0E3 is an ultra-high performance surface mount transient voltage suppressors (TVS) designed for 12V applications. It offers a low-capacitance, low-inductance solution for ESD protection requirements. The device has a low-capacitance, fast-acting ESD diode design that provides >51A of peak pulse current. The device is designed to protect sensitive electronic equipment, including those used in signal processing and is designed to protect against discharges from lower resistance paths than those of ESD protection circuits.
MXLSMBJ2K4.0E3 can be used in any circuit where overvoltage transients need to be suppressed. TVS is a solid-state device that limits the transient voltage, which is the brief, temporary voltage that increases a circuit’s voltage beyond its normal operating level. The device is designed to provide protection against transients, such as electrostatic discharges, lightning, and power surges, which can cause significant damage to sensitive electronic components. It is also highly effective in protecting against devices with current impulses of short duration, such as load cells and sensors.
The working principle of MXLSMBJ2K4.0E3 is very simple. The device has two electrodes, which are connected to a common reference point. When a transient voltage appears on one side of the device, current flows between the two electrodes of the device and dissipates the energy from the transient. This reduces the transient voltage, preventing it from damaging the electronic components. The device is also designed with an impedance of high-frequency transient signals, which further reduces any potential damage.
MXLSMBJ2K4.0E3 is designed to be used in a variety of applications, including: electronic equipment, signal processing, automotive, robotic and communications. The device offers superior ESD and surge protection, making it ideal for a wide range of applications. In addition, the device also has an excellent performance in high-voltage transient events, making it suitable for use in high-voltage environments. Furthermore, the device is designed with low-capacitance, low-inductance, fast-acting ESD diode design, ensuring it is suitable for ESD protection requirements.
Overall, MXLSMBJ2K4.0E3 is an excellent choice for transient voltage suppression and is suitable for a wide range of applications. It is highly effective in protecting against transients and its low-capacitance, fast-acting ESD diode design makes it perfect for ESD protection requirements. With its superior ESD and surge protection, the device is ideal for a wide range of applications and can be successfully used in high-voltage environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MXLSMBG2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ120A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ13A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ14A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ14AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ150A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
MXLSMCJ150AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
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TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL