MXLSMBJ51AE3 Circuit Protection |
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| Allicdata Part #: | 1086-11676-ND |
| Manufacturer Part#: |
MXLSMBJ51AE3 |
| Price: | $ 7.11 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 51V 82.4V DO214AA |
| More Detail: | N/A |
| DataSheet: | MXLSMBJ51AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.45599 |
| Voltage - Clamping (Max) @ Ipp: | 82.4V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 7.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 56.7V |
| Voltage - Reverse Standoff (Typ): | 51V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes are an important component in modern electronic equipment used for power protection and signal conditioning.
The MXLSMBJ51AE3 is designed to provide protection from electrostatic discharge (ESD) and lightning surge. It is a bi-directional TVS (Transient Voltage Suppressor) diode that protects against high voltage transients and fast electrostatic discharges. The device is composed of multiple oxide-silicon surge protection diodes and a two-terminal unidirectional (non-Bidirectional) protection element.
Application Field
The MXLSMBJ51AE3 is designed with an ESD peak pulse power dissipation of 8W and is suitable for use in a wide range of applications such as industrial, automotive, consumer, computers and peripherals, data communications, and medical devices. It helps protect sensitive electronic components from damage due to voltage surges caused by ESD. It is also designed to provide protection against lightning, using the two terminal (non-bidirectional) protection element.
Working Principle
The MXLSMBJ51AE3 uses the principles of substrate contact and diffusion. It uses metal oxide film to create an electrical insulation layer over a silicon substrate. The metal oxide film acts as a barrier against high voltage transients. For ESD protection, it uses two-terminal (non-bidirectional) protection element to protect against overvoltage. For lightning protection, it uses multiple oxide-silicon surge protection diodes to dissipate high energy pulses.
When a voltage transient exceeds the breakdown voltage of the MXLSMBJ51AE3, the current is diverted to the ground pins and dissipated by the bidirectional protection neuron. This dissipates the excess energy away from the protected device, providing protective action on both sides of the diode. This prevents damage to the system and helps ensure the reliable operation of the protected device.
The working principle of MXLSMBJ51AE3 ensures it can be relied upon to provide effective protection against voltage transients. It is easy to install and provides long lasting protection against voltage surges, lightning, and electrostatic discharge.
Conclusion
The MXLSMBJ51AE3 is a bi-directional transient voltage suppressor diode that can provide effective protection against electrostatic discharge and lightning surges. It is designed for a wide range of applications and has an ESD peak pulse power dissipation of 8W. It uses the principles of substrate contact and diffusion to achieve its protective action and is easy to install. The MXLSMBJ51AE3 is an effective device for providing reliable protection against voltage transients.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
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| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
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| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCGLCE60A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
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| MXLSMBJ100A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
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| MXLSMCG58AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
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MXLSMBJ51AE3 Datasheet/PDF