MXLSMBJ51CAE3 Circuit Protection |
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| Allicdata Part #: | 1086-11678-ND |
| Manufacturer Part#: |
MXLSMBJ51CAE3 |
| Price: | $ 7.49 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 51V 82.4V DO214AA |
| More Detail: | N/A |
| DataSheet: | MXLSMBJ51CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.80942 |
| Voltage - Clamping (Max) @ Ipp: | 82.4V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 7.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 56.7V |
| Voltage - Reverse Standoff (Typ): | 51V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes are an essential component for any electronic circuit. This particular component, MXLSMBJ51CAE3, can be used for a variety of applications. In this article, the MXLSMBJ51CAE3 application field and its working principles will be discussed.
The MXLSMBJ51CAE3 can be used in many types of circuits. It is an effective way to protect circuit boards and sensitive components from electrical overstress. This device can be used for surge protection, circuit isolation, and noise reduction, among other things. The device is particularly useful in automotive systems where it can be used to protect against short circuits and overvoltage scenarios.
The working principle of the MXLSMBJ51CAE3 is based on its ability to provide high energy suppression and low capacitance. The device is designed with an MOSFET type structure, which is capable of absorbing high-energy spikes. When a voltage or current spike occurs, the MOSFET structure activates, allowing some of the excess energy to be absorbed and the remainder to be dissipated within the circuit. The MOSFET structure also provides the device with excellent capacitance characteristics, allowing for better filtering of noise and transients.
The MXLSMBJ51CAE3 is also a multilayer diode structure, which also helps with low leakage. This device is used in many circuits where a low capacitance is required. The diode structure also helps in providing circuit isolation and better noise reduction. The multilayer diode structure also helps to reduce the device\'s response time, allowing for more precise circuit protection.
The MXLSMBJ51CAE3 is available in several different packages and sizes, making it an ideal choice for many circuit protection applications. The device also has an adjustable clamping voltage, which allows for precise current and voltage regulation, as well as fine-tuning of its parameters.
In conclusion, the MXLSMBJ51CAE3 is a versatile and useful device for many electronic circuits. Its MOSFET-type structure provides the device with excellent energy absorption and low capacitance characteristics. It can be used for surge protection, circuit isolation, and noise reduction, among other things. Additionally, its multilayer diode structure offers circuit isolation and improved noise reduction. Here, the device\'s adjustable clamping voltage provides precise current regulation and tuning, making it a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMCJLCE15A/TR | Microsemi Co... | 9.04 $ | 1000 | HI REL TVS |
| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
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| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCGLCE60A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
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| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
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MXLSMBJ51CAE3 Datasheet/PDF