MXLSMBJ51CAE3 Allicdata Electronics

MXLSMBJ51CAE3 Circuit Protection

Allicdata Part #:

1086-11678-ND

Manufacturer Part#:

MXLSMBJ51CAE3

Price: $ 7.49
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 51V 82.4V DO214AA
More Detail: N/A
DataSheet: MXLSMBJ51CAE3 datasheetMXLSMBJ51CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.80942
Stock 1000Can Ship Immediately
$ 7.49
Specifications
Voltage - Clamping (Max) @ Ipp: 82.4V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 56.7V
Voltage - Reverse Standoff (Typ): 51V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are an essential component for any electronic circuit. This particular component, MXLSMBJ51CAE3, can be used for a variety of applications. In this article, the MXLSMBJ51CAE3 application field and its working principles will be discussed.

The MXLSMBJ51CAE3 can be used in many types of circuits. It is an effective way to protect circuit boards and sensitive components from electrical overstress. This device can be used for surge protection, circuit isolation, and noise reduction, among other things. The device is particularly useful in automotive systems where it can be used to protect against short circuits and overvoltage scenarios.

The working principle of the MXLSMBJ51CAE3 is based on its ability to provide high energy suppression and low capacitance. The device is designed with an MOSFET type structure, which is capable of absorbing high-energy spikes. When a voltage or current spike occurs, the MOSFET structure activates, allowing some of the excess energy to be absorbed and the remainder to be dissipated within the circuit. The MOSFET structure also provides the device with excellent capacitance characteristics, allowing for better filtering of noise and transients.

The MXLSMBJ51CAE3 is also a multilayer diode structure, which also helps with low leakage. This device is used in many circuits where a low capacitance is required. The diode structure also helps in providing circuit isolation and better noise reduction. The multilayer diode structure also helps to reduce the device\'s response time, allowing for more precise circuit protection.

The MXLSMBJ51CAE3 is available in several different packages and sizes, making it an ideal choice for many circuit protection applications. The device also has an adjustable clamping voltage, which allows for precise current and voltage regulation, as well as fine-tuning of its parameters.

In conclusion, the MXLSMBJ51CAE3 is a versatile and useful device for many electronic circuits. Its MOSFET-type structure provides the device with excellent energy absorption and low capacitance characteristics. It can be used for surge protection, circuit isolation, and noise reduction, among other things. Additionally, its multilayer diode structure offers circuit isolation and improved noise reduction. Here, the device\'s adjustable clamping voltage provides precise current regulation and tuning, making it a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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