MXLSMBJ6.5AE3 Allicdata Electronics

MXLSMBJ6.5AE3 Circuit Protection

Allicdata Part #:

1086-11692-ND

Manufacturer Part#:

MXLSMBJ6.5AE3

Price: $ 7.11
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 6.5V 11.2V DO214AA
More Detail: N/A
DataSheet: MXLSMBJ6.5AE3 datasheetMXLSMBJ6.5AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.45599
Stock 1000Can Ship Immediately
$ 7.11
Specifications
Voltage - Clamping (Max) @ Ipp: 11.2V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 53.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressors) diodes are semiconductor electrical components used to protect circuits from high-voltage transients. MXLSMBJ6.5AE3 is a high-performance Bi-directional Bidirectional Unidirectional Transient Voltage Suppressor (TVS) diode designed to protect sensitive equipment from voltage transients. It is based on Qorvo’s patented QTIP (Quad TMOS Parallel Interface Protection) Process using proven molded high-energy silicon diodes to provide superior high-energy ESD, TVS (Transient Voltage Surge Suppression) and lightning strike protection.

This type of device has become increasingly important in the protection of modern circuits from transient over-voltage due to their ability to rapidly detect and respond to electrical spikes with very low capacitance and high clamping voltage. MXLSMBJ6.5AE3 is a high-performance Bi-directional Unidirectional Transient Voltage Suppression Diode designed for the most stringent of ESD, TVS, and lightning protection applications. It can respond to transients up to 6.5V, providing protection for semiconductor devices from ESD, lightning, induction, and other high-voltage transients.

The working principle of the device is based on the ability of the silicon devices to quickly detect transients and react to them, thereby providing protection for vulnerable components. When the transient is applied, the silicon diode is effectively reverse-biased, which allows the electrons to flow freely to the junction and be quickly dissipated as heat, thus protecting the component from destruction. The MXLSMBJ6.5AE3 provides even better protection with its higher voltage ratings, allowing these devices to be deployed in more demanding environments.

The MXLSMBJ6.5AE3 has a wide range of applications in industry due to its reliable performance, easy installation, and compact form factor. It is suitable for deployment in a variety of high-voltage applications including personal computers, communication systems, consumer electronics, and industrial equipment. These devices are also used to protect against over-voltage transients from lightning strikes, induction, and even erroneous wiring. Furthermore, the MXLSMBJ6.5AE3 can also be used to mitigate high-frequency interference or noise in sensitive applications such as radios.

The MXLSMBJ6.5AE3 is an ideal solution for protecting sensitive electronic equipment from over-voltage transients and EMI/RFI interference. Its advanced technology ensures low capacitance and high clamping voltage, making it an ideal choice for the most rigorous high-voltage applications. The device is robust and reliable, allowing it to perform over a wide range of temperatures and environmental conditions. Its compact form factor makes it ideal for deployment in confined spaces and the device can be easily installed in most applications.

The specific data is subject to PDF, and the above content is for reference

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