
Allicdata Part #: | 1086-11770-ND |
Manufacturer Part#: |
MXLSMBJSAC8.5E3 |
Price: | $ 8.23 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 8.5V 14V DO214AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 7.46914 |
Voltage - Clamping (Max) @ Ipp: | 14V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 30pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 34A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 9.44V |
Voltage - Reverse Standoff (Typ): | 8.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes: MXLSMBJSAC 8.5E3 Application Field and Working Principle
The MXLSMBJSAC 8.5E3 is a unidirectional diode that belongs to the TVS (transient voltage suppression) family. It is designed specifically to protect a device in a system from transient voltage spikes, especially those caused by electrostatic discharge (ESD) or those related to lightning. The device is designed to maintain the system’s optimum performance and reliability by preventing these transient voltages from damaging the electronics.
Common application fields of the MXLSMBJSAC 8.5E3 include computers, consumer electronics, communications, interconnects, digital signage, automotive electronics and networking. Its working principle is simple. When there is a transient voltage spike, the diode will respond by carrying the burst current to ground, effectively dissipating it and protecting the device.
The main components of the MXLSMBJSAC 8.5E3 include a Zener Diode, a Schottky Diode, and an Integrated Circuit. The Zener Diode is responsible for providing protection against transient voltage spikes. The Schottky Diode is used to filter out high frequency noise and thereby minimise electromagnetic interference (EMI) caused by the device in its operating environment. Finally, the Integrated Circuit is responsible for providing a low impedance path for current to flow during ESD and transient voltage spikes.
When a transient voltage spike occurs, the Zener Diode is responsible for providing a characteristic breakdown voltage, allowing the current to flow from the power source to ground. The breakdown voltage and the peak reverse spike energy are the two key parameters that determine the performance of the diode. The breakdown voltage is usually set to the maximum expected voltage, while the peak reverse spike energy determines the capability of the diode to protect against current surges that could cause permanent damage.
The integrated circuit is designed to detect the transient voltage spike and respond accordingly. It is responsible for providing a low impedance path to ground when needed. The IC also contains a number of other features, including temperature, noise and voltage protection. The Schottky diode is responsible for filtering out high frequency EMI, allowing the device to perform at its maximum efficiency in its environment.
The MXLSMBJSAC 8.5E3 is a robust device that is designed to provide excellent protection for your system. Its breakdown voltage and peak reverse spike energy levels ensure maximum protection against transient voltage spikes, while its integrated circuit ensures reliable performance. It is ideal for use in communications, digital signage, consumer electronics, automotive electronics and networking applications.
The specific data is subject to PDF, and the above content is for reference
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MXLSMCJLCE26A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
MXLSMCGLCE26A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MXLSMBJ58CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
MXLSMBG13AE3 | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 13V 21.5V DO215... |
MXLSMBG20AE3 | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MXLSMCG6.0AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 6V 10.3V DO215A... |
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MXLSMLJ110A | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMLG20A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MXLSMLG64A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 64V 103V DO215A... |
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MXLSMCG9.0CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 9V 15.4V DO215A... |
MXLSMBJSAC15 | Microsemi Co... | 8.23 $ | 1000 | TVS DIODE 15V 23.6V DO214... |
MXLSMLG13A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 13V 21.5V DO215... |
MXLSMCGLCE58AE3 | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
MXLSMLJ30CA | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
MXLSMLJ33CA | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MXLSMLJ33CAE3 | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MXLSMLG36CA | Microsemi Co... | 10.03 $ | 1000 | TVS DIODE 36V 58.1V DO215... |
MXLSMBG60CA | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
MXLSMBG85CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 85V 137V DO215A... |
MXLSMBJ11CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMBJ120CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMBG11A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
MXLSMCJ33CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MXLSMCJ6.0CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
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