MXLSMCG130CAE3 Circuit Protection |
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| Allicdata Part #: | 1086-11798-ND |
| Manufacturer Part#: |
MXLSMCG130CAE3 |
| Price: | $ 8.12 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 130V 209V DO215AB |
| More Detail: | N/A |
| DataSheet: | MXLSMCG130CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 7.38668 |
| Voltage - Clamping (Max) @ Ipp: | 209V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 7.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 144V |
| Voltage - Reverse Standoff (Typ): | 130V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MXLSMCG130CAE3 TVS diode is a transient suppressor with a wide application field. In many cases, it can function as an ideal protection device for sensitive electronics against electrical overstress (EOS), electrostatic discharge (ESD), and other fast electrical transients. It is one of the most used and reliable series of transient suppression diodes in the market today.
The MXLSMCG130CAE3 provides an ESD protection level of 8 kV when operated at a breakdown voltage of 32 V and a peak pulse current of 8 A, allowing the device to safely handle transients of high-speed data signals and surge currents. Additionally, its low capacitance of 0.05pF and fast response time of less than 1.0ns make it a versatile choice for many applications like automotive, wireless communications, digital I/Os, and more.
The working principle of the MXLSMCG130CAE3 is based on a metal-oxide semiconductor field-effect transistor (MOSFET), a type of device used to generate an electronic source of power. The MOSFET consists of a semiconductor substrate, typically in the form of a metal oxide, onto which a thin layer of silicon is deposited. This creates a conductive channel that allows current to flow between the source and drain terminals when a voltage is applied. The MOSFET is also equipped with a gate electrode that controls the current flowing through the device. The MXLSMCG130CAE3 utilizes this principle to protect connected circuitry from overvoltage conditions.
The MXLSMCG130CAE3 contains a diode-like structure, in which a p-n junction is formed by the oxide layer of the MOSFET. When a voltage is applied to the diode, it will become forward-biased and will allow current to flow, with its output voltage limited accordingly. Once this voltage exceeds a certain threshold, the device will become reverse-biased, resulting in a high impedance state that effectively blocks current flow.
The MOSFET structure of the device also plays a role in providing protection against transients. When a transient voltage is applied, it will be diverted away from the protected load and into the diode structure. The diode will then clamp the voltage at the breakdown voltage, protecting the load from voltage spikes and surges. At the same time, the low capacitance of the device ensures minimal signal distortion.
The MXLSMCG130CAE3 is a reliable and effective transient suppressor that offers a wide range of applications. It is an ideal choice for protecting sensitive electronics against electrical overstress, electrostatic discharge, and other fast electrical transients. In addition to its high level of protection, the device also features low capacitance and a fast response time, making it a versatile choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCJ43AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 43V 69.4V DO214... |
| MXLSMBG85AE3 | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 85V 137V DO215A... |
| MXLSMCJ120CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 120V 193V DO214... |
| MXLSMCJ51CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMLJ5.0CA | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 5V 9.2V DO214AB |
| MXLSMLG150CA | Microsemi Co... | 10.03 $ | 1000 | TVS DIODE 150V 243V DO215... |
| MXLSMBG64CA | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 64V 103V DO215A... |
| MXLSMCG40AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMCJLCE15A/TR | Microsemi Co... | 9.04 $ | 1000 | HI REL TVS |
| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
| MXLSMLJ15CAE3/TR | Microsemi Co... | 9.47 $ | 1000 | HI REL TVS |
| MXLSMCGLCE90A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCGLCE60A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCG33CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
| MXLSMBJ100A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMBG7.0CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MXLSMCG58AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
| MXLSMCG64AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 64V 103V DO215A... |
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MXLSMCG130CAE3 Datasheet/PDF