MXLSMCG130CAE3 Allicdata Electronics

MXLSMCG130CAE3 Circuit Protection

Allicdata Part #:

1086-11798-ND

Manufacturer Part#:

MXLSMCG130CAE3

Price: $ 8.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 130V 209V DO215AB
More Detail: N/A
DataSheet: MXLSMCG130CAE3 datasheetMXLSMCG130CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 7.38668
Stock 1000Can Ship Immediately
$ 8.12
Specifications
Voltage - Clamping (Max) @ Ipp: 209V
Supplier Device Package: SMCG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 7.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 144V
Voltage - Reverse Standoff (Typ): 130V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MXLSMCG130CAE3 TVS diode is a transient suppressor with a wide application field. In many cases, it can function as an ideal protection device for sensitive electronics against electrical overstress (EOS), electrostatic discharge (ESD), and other fast electrical transients. It is one of the most used and reliable series of transient suppression diodes in the market today.

The MXLSMCG130CAE3 provides an ESD protection level of 8 kV when operated at a breakdown voltage of 32 V and a peak pulse current of 8 A, allowing the device to safely handle transients of high-speed data signals and surge currents. Additionally, its low capacitance of 0.05pF and fast response time of less than 1.0ns make it a versatile choice for many applications like automotive, wireless communications, digital I/Os, and more.

The working principle of the MXLSMCG130CAE3 is based on a metal-oxide semiconductor field-effect transistor (MOSFET), a type of device used to generate an electronic source of power. The MOSFET consists of a semiconductor substrate, typically in the form of a metal oxide, onto which a thin layer of silicon is deposited. This creates a conductive channel that allows current to flow between the source and drain terminals when a voltage is applied. The MOSFET is also equipped with a gate electrode that controls the current flowing through the device. The MXLSMCG130CAE3 utilizes this principle to protect connected circuitry from overvoltage conditions.

The MXLSMCG130CAE3 contains a diode-like structure, in which a p-n junction is formed by the oxide layer of the MOSFET. When a voltage is applied to the diode, it will become forward-biased and will allow current to flow, with its output voltage limited accordingly. Once this voltage exceeds a certain threshold, the device will become reverse-biased, resulting in a high impedance state that effectively blocks current flow.

The MOSFET structure of the device also plays a role in providing protection against transients. When a transient voltage is applied, it will be diverted away from the protected load and into the diode structure. The diode will then clamp the voltage at the breakdown voltage, protecting the load from voltage spikes and surges. At the same time, the low capacitance of the device ensures minimal signal distortion.

The MXLSMCG130CAE3 is a reliable and effective transient suppressor that offers a wide range of applications. It is an ideal choice for protecting sensitive electronics against electrical overstress, electrostatic discharge, and other fast electrical transients. In addition to its high level of protection, the device also features low capacitance and a fast response time, making it a versatile choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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