MXLSMCJ18AE3 Circuit Protection

MXLSMCJ18AE3 TVS - Diodes Application Field and Working Principle

MXLSMCJ18AE3 TVS - Diodes are designed to provide high-speed transient protection to drive circuits of differential data line pairs. The application field of MXLSMCJ18AE3 TVS diodes are not limited to computing, communication, consumer and automotive electronics.

Features of MXLSMCJ18AE3 TVS - Diodes

MXLSMCJ18AE3 TVS diodes are designed to comply with IEC 61000-4-2 level 4, ESD (electrostatic discharge) protection. The features of MXLSMCJ18AE3 TVS diodes include:

• ESD protection of up to ±30kV (Contact and Air)
• Extremely low capacitance (1.0pF typ @ 2V,5.0pF max @ 4V)
• Fast response time (< 300ps)
• Low leakage current (100pA max @ 4V)
• ESD protection of data line pairs (RS-422, RS-485 and Ethernet)
• Extendible to up to 14 line pairs
• UL certified self-restoring TVS (UL1441, UL 497B)

Application Field

The key application fields of MXLSMCJ18AE3 TVS diodes are computing, communication, consumer and automotive electronics. Its IO interfaces are always exposed to ESD pulses, making it necessary to protect them from damage with the use of MXLSMCJ18AE3 TVS diodes. MXLSMCJ18AE3 TVS diodes are particularly suitable for use in Ethernet, USB, video, audio and other systems needing effective ESD protection.

MXLSMCJ18AE3 TVS diodes are also suitable for various applications in industrial and automotive electronics such as engine control systems, airbag systems, brake systems and ECUs.

Working Principle

MXLSMCJ18AE3 TVS diodes work on the principle of avalanche breakdown; that is, the voltage required to sustain the current across its junction increases greatly with minor increases in current. This results in a very fast acting device capable of responding to transients in nanoseconds. When a voltage pulse is applied to the diode, the junction breakdown voltage rises exponentially until it reaches a voltage level at which the device can no longer sustain current. The device then shuts off, dissipating the voltage spike and protecting the equipment.

The main components of MXLSMCJ18AE3 TVS - Diodes are the p-n junction, capacitance, series inductance, and switching elements. The working principle of the p-n junction component is that the depletion region causes an avalanche breakdown and the device can detect a transient voltage in less than a nanosecond.

The capacitance component helps to filter out high-frequency noise and reduce capacitive coupling. The series inductance component behaves like a resistor, which helps to reduce the rate of rise of current and limit the peak current that goes through the diode. Lastly, the switching element helps to direct current to the intended path and be switched off under overload current.