MXLSMCJ70AE3 Allicdata Electronics

MXLSMCJ70AE3 Circuit Protection

Allicdata Part #:

1086-12194-ND

Manufacturer Part#:

MXLSMCJ70AE3

Price: $ 7.43
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70V 113V DO214AB
More Detail: N/A
DataSheet: MXLSMCJ70AE3 datasheetMXLSMCJ70AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.76229
Stock 1000Can Ship Immediately
$ 7.43
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 13.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes are a form of Transient Voltage Suppressor used for protection against high-voltage and transient voltage. TVS-Diodes are devices designed to provide protection against voltage spikes and transient over-voltages. TVS-Diodes are designed to absorb and dissipate these electrical bursts or spikes quickly, thus providing a low-resistance path to ground.

The MXLSMCJ70AE3 is an ultra-small, low power TVS DIODE designed for protection against electrostatic discharge (ESD) and electrical fast transients (EFT). The MXLSMCJ70AE3 is rated at a peak pulse power of 14.5 W and a working Voltage of 70V DC. The device features a low capacitance junction that enables ESD protection for sensitive electronic components. It also features a low profile package and an optimized Reverse Standoff Voltage that provides protection for high speed data lines and USB3.0 interfaces.

The application field of the MXLSMCJ70AE3 is in the protection of microelectronic components and data lines from ESD and other transients. In addition, the device can be used to protect high-speed data lines and USB3.0 interfaces. The device is suitable for use in automotive, consumer, industrial, and computing applications.

The working principle of the MXLSMCJ70AE3 is based on the principle of avalanche breakdown, whereby the voltage of the TVS-Diodes increases until it is greater than the reverse breakdown voltage of the device. In this state, the current flowing through the device increases exponentially, thus providing a low-resistance path to ground. This process then leads to the absorption and dissipation of voltage spikes and transients, thus providing protection against such events.

The MXLSMCJ70AE3 is a low power, ultra-small TVS diode that provides effective protection against ESD and EFTs. The device is suitable for use in automotive, consumer, industrial and computing applications and features an optimized Reverse Standoff Voltage to provide more efficient protection for high-speed data lines and USB3.0 interfaces. The working principle is based on the principle of avalanche breakdown, whereby the voltage increases until it is greater than the reverse breakdown voltage of the device, thus providing a low-resistance path to ground and dissipating the voltage spike or transient.

The specific data is subject to PDF, and the above content is for reference

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